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The KSC2757RMTF is an NPN epitaxial silicon transistor manufactured by onsemi, packaged in a SOT-23 surface-mount configuration. It features a collector-emitter voltage (VCEO) of 15 V and a collector current (IC) rating of 50 mA. The device provides a collector power dissipation (PC) of 150 mW at 25°C ambient temperature. Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 240 depending on the grade, and a high current gain bandwidth product (fT) with a typical value of 1100 MHz at IC=5mA. The junction temperature maximum is 150°C.
Verify component authenticity through authorized distribution channels. Confirm datasheet revision A2 specifications match design requirements. Ensure storage conditions remain within -55°C to +150°C. Check for moisture sensitivity levels prior to soldering. Validate hFE binning classification against circuit gain requirements.
Select based on required fT performance for VHF frequency operation. Consider hFE grading (R, O, or Y) to meet specific DC gain thresholds. Evaluate thermal management capabilities given the 150 mW dissipation limit in small packages. Compare noise figures if low-noise amplifier applications are targeted.
This component belongs to the family of NPN epitaxial silicon transistors designed for radio frequency applications. It shares similar packaging and basic electrical profiles with other small-signal RF transistors intended for tuner and oscillator modules in consumer electronics and communication equipment.
Direct pin-compatible substitutes may include other NPN SOT-23 transistors with comparable VCEO, IC, and fT ratings. Verify that replacement devices meet the same noise figure and hFE classification requirements for the specific VHF application.