KSC2786YTA

KSC2786YTA

$0.03
  • Description:RF TRANS NPN 20V 600MHZ TO-92S
  • Series:-

SKU:0695fe7ffa74 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 20V 600MHZ TO-92S
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):20V
  • Frequency - Transition:600MHz
  • Noise Figure (dB Typ @ f):3dB ~ 5dB @ 100MHz
  • Gain:18dB ~ 22dB
  • Power - Max:250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Current - Collector (Ic) (Max):20mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Short Body
  • Supplier Device Package:TO-92S
  • Grade:-
  • Qualification:-

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KSC2786YTA

Overview

The KSC2786YTA is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-92S1 package. It features a collector-base voltage of 30 V, a collector-emitter voltage of 20 V, and an emitter-base voltage of 4 V. The device supports a maximum collector current of 20 mA with a power dissipation rating of 250 mW. Electrical characteristics include a DC current gain ranging from 40 to 240 depending on classification, a typical current gain bandwidth product of 600 MHz, and a noise figure between 3.0 and 5.0 dB at 100 MHz.

Feature Summary

  • High current gain bandwidth product reaching 600 MHz for RF applications
  • High power gain capability of 22 dB at 100 MHz
  • Low noise figure suitable for sensitive signal processing

Applications

  • TV PIF Amplifier
  • FM Tuner
  • RF Amplifier
  • Mixer
  • Oscillator

Procurement Notes

Verify the component status as obsolete or discontinued through official manufacturer channels before procurement planning. Confirm that the specific YTA suffix corresponds to the required packaging configuration. Ensure compatibility with existing circuit designs given the historical nature of this Fairchild Semiconductor part number now managed under the onsemi portfolio.

Selection Notes

Select the KSC2786YTA when designing circuits requiring high-frequency performance up to 100 MHz with low noise characteristics. Consider the 20 mA collector current limit and 250 mW power dissipation constraints during thermal management. Evaluate the hFE classification requirements (R, O, or Y) to match the necessary DC current gain range for the specific amplifier or oscillator application.

Part Context

This component is an NPN epitaxial silicon transistor originally produced by Fairchild Semiconductor. It belongs to a series of small-signal transistors designed for radio frequency and audio amplification tasks. The device utilizes a TO-92S1 plastic encapsulation, providing a compact form factor suitable for through-hole mounting in consumer electronics and communication equipment.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

KSC2786YTAKSC2786YTA
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