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KSC5200OTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is TRANS NPN 230V 13A HPM F2. Review the specifications below when checking this part for your BOM.
The KSC5200OTU is an NPN power bipolar junction transistor manufactured by Fairchild Semiconductor. It features a maximum collector-emitter voltage of 230 V and a continuous collector current of 13 A. The device has a maximum power dissipation rating of 130 W and a transition frequency of 30 MHz. It is housed in a TO-264-3 (HPM F2) through-hole package, designed for high-power applications requiring robust switching capabilities.
Verify the exact package designation against official datasheets, as distributor listings may vary between HPM F2 and TO-264-3 terminology. Confirm RoHS compliance status if required for specific manufacturing standards. Ensure thermal management solutions are adequate for the 130 W power dissipation rating during operation.
Select this component when a high-voltage NPN transistor with significant current capacity is required. The 230 V rating provides headroom for inductive loads or higher supply voltages compared to standard low-voltage transistors. Consider the through-hole package for applications where mechanical stability and heat sinking via chassis mounting are prioritized over surface area constraints.
This part belongs to the family of power bipolar transistors used in linear and switching modes. It serves as a discrete alternative to integrated driver stages in medium-power audio and industrial equipment. The manufacturer's history includes acquisitions that may affect documentation availability, so referencing original Fairchild specifications is critical for accurate parameter interpretation.
Direct substitutes must match the NPN configuration, 230 V minimum voltage, and similar current ratings. Verify pinout compatibility for the TO-264/HPM package before substitution. Cross-reference with onsemi equivalents if available, ensuring thermal resistance characteristics align with the original design requirements.
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