KSD401Y

Single Bipolar Transistors Overview

The KSD401 is an NPN epitaxial silicon transistor designed for vertical deflection output applications. It features a collector-base voltage of 200 V, a collector-emitter voltage of 150 V, and a maximum collector current of 2 A. The device supports a collector dissipation of 25 W at a case temperature of 25°C. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 400 depending on the classification, with a transition frequency of 5 MHz. It is housed in a TO-220 package.

Single Bipolar Transistors Feature Summary

• Designed specifically for vertical deflection output circuits
• High voltage capability with 200 V collector-base breakdown
• Robust power handling with 25 W dissipation rating

Single Bipolar Transistors Applications

• Vertical deflection output stages in television sets
• High-voltage switching circuits
• Power amplifier outputs requiring high voltage tolerance

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entities like ON Semiconductor due to corporate integration history. Confirm the specific hFE classification suffix (Y or G) required for your circuit's gain requirements. Ensure the TO-220 package matches your thermal management design. Check for updated part numbers if sourcing through modern distributors managing legacy Fairchild inventory.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor is needed for vertical deflection tasks. Compare the 150 V collector-emitter rating against your circuit's peak voltage. Consider the 2 A current limit and 25 W power dissipation capabilities relative to your load. Verify the hFE range meets your drive requirements. Ensure the TO-220 package fits your board layout and heatsinking constraints.

Single Bipolar Transistors Part Context

The KSD401 belongs to the family of power bipolar transistors intended for display technology applications. It serves as a complement to the KSB546 PNP transistor. The device utilizes epitaxial silicon construction to handle high voltages and currents typical in CRT deflection systems. Its TO-220 packaging facilitates effective heat dissipation for continuous operation.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the KSB546 as the complementary PNP device. Direct substitutes should match the 150 V VCEO, 2 A IC, and TO-220 package specifications. Verify equivalent hFE ranges and saturation voltages for circuit compatibility.