Single Bipolar Transistors KSE340S product image

KSE340S

  • Description:TRANS NPN 300V 0.5A TO-126-3
  • Series:-

SKU:0546b5112edf Category: Brand:

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KSE340S is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 300V 0.5A TO-126-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSE340S

  • Description:TRANS NPN 300V 0.5A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 50mA, 10V
  • Power - Max:20 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3

Single Bipolar Transistors datasheet and documents for KSE340S

KSE340S

Single Bipolar Transistors Overview

The KSE340S is an NPN epitaxial silicon transistor manufactured by onsemi, formerly Fairchild Semiconductor. It is housed in a TO-126 (TO-225AA) three-pin through-hole package designed for high-voltage general-purpose applications. The device supports a maximum collector current of 500 mA and offers a collector-emitter breakdown voltage of 300 V. Key electrical specifications include a collector-base voltage of 300 V, an emitter-base voltage of 5 V, and a power dissipation rating of 20 W at 25°C case temperature. The DC current gain ranges from 30 to 240 under standard test conditions.

Single Bipolar Transistors Feature Summary

  • High collector-emitter breakdown voltage capability suitable for demanding circuit environments
  • Designed as the complementary counterpart to the KSE350 PNP transistor
  • Optimized for transformer-based switching and driving applications

Single Bipolar Transistors Applications

  • Transformer driver circuits
  • General-purpose high-voltage switching
  • Complementary amplifier stages paired with KSE350

Single Bipolar Transistors Procurement Notes

Verify part authenticity against official onsemi documentation due to historical Fairchild integration changes. Confirm that the suffix 'S' aligns with specific packaging or ordering requirements. Ensure compliance with RoHS standards if required by the application. Check for updated nomenclature where underscores may have been replaced by dashes in newer system records.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN switch is required alongside a matching PNP device. The TO-126 package facilitates heat sinking for moderate power levels. Evaluate thermal management needs carefully, as power dissipation ratings are based on a 25°C case temperature. Verify that the 300 V breakdown voltage meets the peak transient requirements of the target circuit design.

Single Bipolar Transistors Part Context

This transistor belongs to the KSE340 series, originally developed by Fairchild Semiconductor before its acquisition by onsemi. The product line focuses on high-voltage discrete semiconductors for industrial and consumer electronics. The KSE340S represents the specific ordering variant within this family, maintaining the core electrical characteristics defined in the original datasheet specifications.

Single Bipolar Transistors Replacement Considerations

The KSE350 serves as the direct complementary PNP replacement for circuit symmetry. Cross-reference with other NPN transistors offering similar 300 V ratings and TO-126 footprints if exact matches are unavailable.

KSE340SKSE340S

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