KSE702S

Single Bipolar Transistors Overview

The KSE702S is a PNP epitaxial silicon Darlington transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of -80 V and a continuous collector current (IC) rating of -4 A. The device provides a minimum DC current gain (hFE) of 100 at IC = -4 A, with a maximum collector dissipation of 40 W at 25°C case temperature. It utilizes a TO-126 package for through-hole mounting.

Single Bipolar Transistors Feature Summary

• Monolithic construction with built-in base-emitter resistors
• High DC current gain capability
• Complements the NPN KSE802 device

Single Bipolar Transistors Applications

• General-purpose switching applications
• Driver circuits requiring high current gain
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor legacy assets are now part of onsemi. Confirm the specific suffix 'S' matches the required tape-and-reel or bulk packaging configuration against the official datasheet specifications. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing process.

Single Bipolar Transistors Selection Notes

Select this component when an 80 V PNP Darlington transistor is required for moderate power switching. Compare the hFE characteristics against circuit drive requirements. Verify thermal management capabilities for the TO-126 package under expected load conditions.

Single Bipolar Transistors Part Context

This component belongs to the KSE700 series of PNP Darlington transistors. It serves as the complementary pair to the KSE800 series NPN devices. The series offers high current handling and robust saturation characteristics suitable for general power control tasks.

Single Bipolar Transistors Replacement Considerations

KSE703