KSH350TF

Single Bipolar Transistors Overview

The KSH350TF is a PNP epitaxial silicon transistor designed for high-voltage power applications in surface mount configurations. It features a D-PAK package with leads formed for SMD assembly. Key electrical ratings include a collector-base voltage of -300 V, a collector-emitter voltage of -300 V, and an emitter-base voltage of -3 V. The device supports a continuous DC collector current of -0.5 A and a pulse collector current of -0.75 A. At a case temperature of 25°C, the maximum collector dissipation is rated at 15 W, while the junction temperature limit is 150 °C.

Single Bipolar Transistors Feature Summary

• High voltage capability with 300 V breakdown ratings for collector-base and collector-emitter terminals.
• Surface mount optimized design utilizing lead-formed D-PAK packaging for automated assembly compatibility.
• Robust thermal performance allowing up to 15 W power dissipation under controlled case temperature conditions.

Single Bipolar Transistors Applications

• High voltage switching circuits
• Power amplifier stages
• General purpose discrete power transistor applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the presence of the TF suffix indicates the specific D-PAK variant. Ensure storage and handling procedures comply with moisture sensitivity levels defined for surface mount devices. Validate that the intended operating environment remains within the specified junction temperature limits to maintain reliability.

Single Bipolar Transistors Selection Notes

Select this component when a PNP configuration is required for high voltage environments exceeding standard low-voltage transistors. The D-PAK form factor provides a balance between thermal management and board space efficiency compared to through-hole alternatives. Evaluate the 15 W dissipation rating against actual thermal resistance values in the final assembly to ensure safe operation without excessive heatsinking.

Single Bipolar Transistors Part Context

This component belongs to the KSH series of high voltage power transistors manufactured originally by Fairchild Semiconductor. The series includes variants such as the KSH340 and KSH350, all sharing similar high-voltage characteristics but differing in specific package options like I-PAK or D-PAK. These transistors are engineered for robust performance in demanding power electronics environments.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the MJD350TF, which shares identical electrical ratings and pinout configuration. Other compatible replacements within the same family are the KSH340TF and KSH350TF, provided the specific package type matches the existing footprint requirements on the printed circuit board.

Single Bipolar Transistors FAQ

What is the difference between the KSH350 and KSH350I?

The KSH350 uses lead-formed pins suitable for surface mount applications, whereas the KSH350I features straight leads designated as I-PAK.

What is the maximum collector current rating?

The device supports a continuous DC collector current of -0.5 A and a peak pulse collector current of -0.75 A.

How does the package affect power dissipation?

At a case temperature of 25°C, the D-PAK package allows for a maximum collector dissipation of 15 W, significantly higher than the 1.56 W rating at an ambient temperature of 25°C.