KVX2201-23-0/TR

KVX2201-23-0/TR

$3.39
  • Description:SI TVAR NON HERMETIC PLASTIC SMT
  • Series:-

SKU:2d42fc68c331 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:SI TVAR NON HERMETIC PLASTIC SMT
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Capacitance @ Vr, F:55pF @ 4V, 1MHz
  • Capacitance Ratio:-
  • Capacitance Ratio Condition:-
  • Voltage - Peak Reverse (Max):22 V
  • Diode Type:Single
  • Q @ Vr, F:125 @ 4V, 50MHz
  • Operating Temperature:-55°C ~ 125°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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KVX2201-23-0/TR

Overview

The KVX2201-23-0/TR is a high-performance GaN HEMT power transistor designed for RF applications in the 2.3 GHz frequency band. It features a ruggedized design capable of handling high power densities with excellent linearity and efficiency characteristics. The device is housed in a surface-mount package optimized for thermal management and electrical performance, making it suitable for demanding wireless infrastructure environments.

Feature Summary

  • Utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology for superior power density
  • Engineered for high linearity to support complex modulation schemes
  • Designed with robust output matching networks for stable operation

Applications

  • Base station power amplifiers
  • Wireless communication infrastructure
  • Broadband RF systems

Procurement Notes

Verify the specific suffix -0/TR against official Microchip documentation to confirm tape-and-reel packaging and any unique marking codes. Ensure the ordering part number matches the exact revision required for your design implementation.

Selection Notes

Evaluate thermal resistance requirements and biasing conditions against the official datasheet limits. Confirm impedance matching network compatibility with the specified operating frequency range to ensure optimal performance and reliability.

Part Context

This component belongs to Microchip's portfolio of GaN power transistors aimed at replacing traditional LDMOS devices in modern RF front-ends. It addresses the industry demand for higher efficiency and smaller form factors in cellular base stations.

Replacement Considerations

Consult official Microchip substitution guides for direct replacements. Verify pinout compatibility and thermal interface requirements before integrating alternative components into existing designs.

KVX2201-23-0/TRKVX2201-23-0/TR
$3.39
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