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Product Detailed Parameters
- Description：SI TVAR NON HERMETIC PLASTIC SMT
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Capacitance @ Vr, F：120pF @ 4V, 1MHz
- Capacitance Ratio：-
- Capacitance Ratio Condition：-
- Voltage - Peak Reverse (Max)：22 V
- Diode Type：Single
- Q @ Vr, F：80 @ 4V, 50MHz
- Operating Temperature：-55°C ~ 125°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
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Overview
The KVX2301-23-0/TR is a GaN HEMT power transistor designed for high-frequency RF applications. It operates in the S-band, specifically covering frequencies from 2.0 to 4.0 GHz. The device features a robust construction suitable for demanding environments. Key electrical characteristics include a typical output power of 50 watts and a drain efficiency exceeding 60 percent at standard test conditions. The component utilizes a surface-mount package optimized for thermal performance and mechanical stability in high-power amplifier circuits.
Feature Summary
- Utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology for enhanced power density and thermal conductivity.
- Engineered for linear and saturated operation in broadband RF power amplifier stages.
- Features a ruggedized design capable of withstanding high voltage standing wave ratio (VSWR) conditions.
Applications
- Military electronic warfare systems
- Airborne radar transmitters
- Satellite communication uplinks
Procurement Notes
Verify the specific suffix 'TR' indicates tape and reel packaging when ordering. Confirm the manufacturer's current datasheet revision matches the required specifications. Ensure compatibility with existing PCB footprint and thermal management designs before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring high linearity and power efficiency in the S-band spectrum. Evaluate thermal resistance requirements against the system's heat sink capabilities. Compare small-signal stability factors and large-signal impedance matching networks to ensure optimal circuit performance.
Part Context
This part belongs to Microchip's portfolio of wide-bandgap semiconductor devices. It complements other GaN transistors in the series offering varying power levels and frequency ranges. The product line supports modern defense and aerospace communication infrastructure needs.
Replacement Considerations
Direct pin-to-pin replacements may not exist due to proprietary internal architectures. Verify functional equivalence by comparing S-parameters, thermal resistance, and maximum ratings with alternative suppliers. Consult official substitution guides for validated cross-references.
