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The LBN150B01-7 is a complementary bipolar transistor array manufactured by Diodes Incorporated. It integrates one NPN and one PNP transistor within a single SOT-26 surface-mount package. The device supports a maximum collector-emitter voltage of 40V and a continuous collector current of 200mA. Power dissipation is rated at 300mW, with a transition frequency of 250MHz. Operating temperatures range from -55°C to +150°C.
Verify the component authenticity through authorized Diodes Incorporated distributors or certified partners. Confirm that the received units match the specific LBN150B01-7 designation and SOT-26 packaging. Ensure compliance with RoHS3 standards as documented in the official specifications before integration into production lines.
Select this component when a matched complementary pair is required for space-constrained designs. The integrated nature simplifies layout compared to discrete components. Evaluate the 200mA current rating and 40V voltage limits against circuit requirements to ensure adequate headroom for thermal and electrical performance.
This part belongs to the Bipolar Transistor Arrays category within Diodes Incorporated's portfolio. It serves as a specialized solution for applications requiring paired NPN/PNP functionality without the footprint penalty of separate devices. The product targets markets including automotive, industrial, and consumer electronics where reliability and size are critical.
Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully to ensure compatibility with existing board layouts and thermal management strategies.