LET16045C

$66.84

Description：RF MOSFET LDMOS 28V M243
Series：-

SKU:5cdc6bc233e9 Category: RF FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V M243
Series：-
Mfr：STMicroelectronics
Package：Box
Technology：LDMOS
Frequency：1.6GHz
Gain：16dB
Voltage - Test：28 V
Current Rating (Amps)：9A
Noise Figure：-
Current - Test：400 mA
Power - Output：45W
Voltage - Rated：80 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：M243
Supplier Device Package：M243
Configuration：-

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LET16045C

Overview

The LET16045C is an N-channel LDMOS RF power transistor from STMicroelectronics, designed for high gain and broadband performance in common source mode. It operates at a drain-source voltage of 28 V with a maximum rating of 80 V. The device delivers 45 W of output power and achieves a gain of 16 dB at 1.6 GHz. Key electrical parameters include a test current of 400 mA and a current rating of 9 A. It features excellent thermal stability and robust construction suitable for demanding RF amplifier applications.

Feature Summary

High gain and broadband performance optimized for common source operation
Robust RF amplifier design with high voltage rating capability
Excellent thermal stability ensuring reliable operation under stress

Applications

INMARSAT satellite communication systems
Broadband RF amplifiers
High gain linear amplifier stages

Procurement Notes

Verify the specific package marking and date code against official STMicroelectronics documentation to ensure authenticity. Confirm that the M-243-3 case style matches your board layout requirements. Request the latest datasheet revision to validate electrical characteristics before finalizing procurement orders.

Selection Notes

Select this component when designing for INMARSAT or similar satellite links requiring 45 W output at 1.6 GHz. Ensure the circuit supports 28 V operation and provides adequate heat sinking due to the power dissipation levels. Verify compatibility with the required impedance matching networks for optimal gain performance.

Part Context

This part belongs to STMicroelectronics' LDMOS RF transistor family, specifically engineered for high-power RF applications. The LET series utilizes advanced Lateral Diffused Metal Oxide Semiconductor technology to provide superior linearity and efficiency compared to standard MOSFETs in similar power classes.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult STMicroelectronics directly for potential cross-reference options if this specific model is unavailable.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.