LET20045C

LET20045C

$62.69
  • Description:RF MOSFET LDMOS 28V M243
  • Series:-

SKU:e18ebe079943 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V M243
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Box
  • Technology:LDMOS
  • Frequency:2GHz
  • Gain:13.3dB
  • Voltage - Test:28 V
  • Current Rating (Amps):12A
  • Noise Figure:-
  • Current - Test:500 mA
  • Power - Output:54W
  • Voltage - Rated:80 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:M243
  • Supplier Device Package:M243
  • Configuration:-

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LET20045C

Overview

The LET20045C is an N-channel RF LDMOS power transistor manufactured by STMicroelectronics. It is designed for high-efficiency radio frequency applications, featuring a rated drain-source voltage of 80V and a test voltage of 28V. The device supports a continuous drain current of 12A with a maximum power dissipation of 130W. Packaged in the M243 form factor, it operates effectively up to 2GHz, providing a gain of 13.3dB and output power capability of 54W.

Feature Summary

  • N-channel LDMOS construction optimized for RF power amplification
  • High power handling with 130W dissipation capacity
  • Operates at frequencies up to 2GHz

Applications

  • RF power amplification stages
  • Wireless communication base stations
  • Broadcast transmitter systems

Procurement Notes

Verify component authenticity through authorized channels as this part number is listed as obsolete. Confirm package integrity and pin alignment against the official M243 specification sheet prior to integration. Ensure storage conditions meet semiconductor standards to prevent degradation of the RF performance characteristics.

Selection Notes

Select this component for designs requiring robust RF power output within the 28V to 80V range. Consider the M243 package dimensions for PCB layout compatibility. Evaluate thermal management requirements due to the 130W power dissipation rating. Verify that the 12A current limit aligns with the system's peak load demands.

Part Context

This RF MOSFET belongs to STMicroelectronics' discrete semiconductor portfolio, specifically targeting high-frequency power applications. It utilizes LDMOS technology to deliver stable performance in demanding RF environments. The M243 package provides a standardized footprint for mounting in industrial and commercial RF hardware.

Replacement Considerations

The product lifecycle status is officially recorded as Obsolete. No direct substitute part numbers are confirmed in public documentation. Designers should consult manufacturer archives or engineering support for validated alternative components suitable for legacy system maintenance.

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