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The LET20045C is an N-channel RF LDMOS power transistor manufactured by STMicroelectronics. It is designed for high-efficiency radio frequency applications, featuring a rated drain-source voltage of 80V and a test voltage of 28V. The device supports a continuous drain current of 12A with a maximum power dissipation of 130W. Packaged in the M243 form factor, it operates effectively up to 2GHz, providing a gain of 13.3dB and output power capability of 54W.
Verify component authenticity through authorized channels as this part number is listed as obsolete. Confirm package integrity and pin alignment against the official M243 specification sheet prior to integration. Ensure storage conditions meet semiconductor standards to prevent degradation of the RF performance characteristics.
Select this component for designs requiring robust RF power output within the 28V to 80V range. Consider the M243 package dimensions for PCB layout compatibility. Evaluate thermal management requirements due to the 130W power dissipation rating. Verify that the 12A current limit aligns with the system's peak load demands.
This RF MOSFET belongs to STMicroelectronics' discrete semiconductor portfolio, specifically targeting high-frequency power applications. It utilizes LDMOS technology to deliver stable performance in demanding RF environments. The M243 package provides a standardized footprint for mounting in industrial and commercial RF hardware.
The product lifecycle status is officially recorded as Obsolete. No direct substitute part numbers are confirmed in public documentation. Designers should consult manufacturer archives or engineering support for validated alternative components suitable for legacy system maintenance.