LET9045TR

Overview

The LET9045TR is a common-source N-channel enhancement-mode lateral MOSFET optimized for RF power amplification up to 1 GHz. It features a PowerSO-10 package with an exposed bottom for thermal management. The device operates at a frequency of 960 MHz, providing a gain of 18.5 dB. It is designed for broadband commercial and industrial applications requiring reliable RF performance.

Feature Summary

• Common-source N-channel enhancement-mode lateral MOSFET structure
• Optimized for RF power amplification applications
• PowerSO-10 package with exposed bottom for efficient heat dissipation

Applications

• Broadband commercial RF power amplification
• Industrial RF power amplification
• RF signal processing circuits

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the PowerSO-10 package dimensions and thermal requirements align with the target PCB layout. Ensure compatibility with the intended operating frequency and power levels for the specific application design.

Selection Notes

Select this component for applications requiring N-channel LDMOS technology in a compact surface-mount package. Consider the 18.5 dB gain and 960 MHz operation when designing matching networks. Evaluate the thermal performance provided by the exposed bottom pad for high-power RF environments.

Part Context

This part belongs to STMicroelectronics' portfolio of RF power transistors. It utilizes lateral DMOS (LDMOS) technology, which is standard for high-frequency power amplification. The TR suffix indicates tape and reel packaging for automated assembly processes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.