LET9060C

Overview

The LET9060C is a 28/32V common-source N-channel enhancement-mode lateral double-diffused metal-oxide semiconductor (LDMOS) radio frequency power transistor designed for broadband commercial, aviation, and industrial applications with operation up to 1.5 GHz. It supports Class A, AB, and C amplifier configurations for various modulation formats. Key performance metrics include an output power of 80 W at 28 V, achieving 17 dB gain and 70% efficiency at 945 MHz. The device features excellent thermal stability, integrated electrostatic discharge protection meeting HBM Class 2 standards, and utilizes a beryllium oxide-free package compliant with European directives.

Feature Summary

• Common-source configuration optimized for broadband RF power amplification
• Integrated electrostatic discharge protection rated to Human Body Model Class 2
• Excellent thermal stability ensuring reliable operation under varying conditions
• Beryllium oxide-free construction compliant with environmental regulations

Applications

• Broadband commercial wireless infrastructure
• Aviation communication systems
• Industrial RF heating and processing equipment

Procurement Notes

Verify the current lifecycle status as the component may be obsolete or restricted. Confirm that the specific package variant matches the design requirements for thermal management and pin compatibility. Ensure compliance with relevant regional environmental directives regarding hazardous substances before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high linearity and efficiency in broadband RF applications up to 1.5 GHz. Evaluate the thermal resistance characteristics against the expected power dissipation at 80 W output. Consider the integration of matching networks suitable for balanced microstrip lines to maximize gain and stability across the operating bandwidth.

Part Context

This LDMOS transistor belongs to STMicroelectronics' portfolio of RF power devices intended for demanding communication environments. It serves as a core active element in power amplifier stages where wide bandwidth and robust thermal performance are critical. The device complements other RF components by providing high-power capability without the use of beryllium oxide in its packaging structure.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify if the LET9060S or similar series members offer compatible electrical parameters and pinouts for direct replacement in existing designs.