LET9060F

Overview

The LET9060F is an RF power transistor from the LdmoST family, featuring an n-channel enhancement-mode design. It operates with a drain-source breakdown voltage of 80 V and a continuous drain current of 12 A. The device supports an operating frequency up to 1 GHz, with specific characterization at 945 MHz. Key electrical parameters include a maximum power dissipation of 130 W, a test voltage of 28 V, and a gain of 18 dB. It utilizes the M-250-3 surface mount package.

Feature Summary

• N-channel enhancement-mode LDMOS technology for RF applications
• High power dissipation capability of 130 W
• Surface mount M-250-3 package configuration

Applications

• RF power amplification
• Broadband RF systems
• Wireless communication infrastructure

Procurement Notes

Verify the exact datasheet version and manufacturer specifications directly from STMicroelectronics before procurement. Confirm that the M-250-3 package dimensions match your PCB layout requirements. Ensure that thermal management solutions are adequate for the 130 W power dissipation rating during operation. Cross-reference part numbers to avoid counterfeit components.

Selection Notes

Select this component when high power handling and wide bandwidth are required for RF stages. The 80 V breakdown voltage suits moderate voltage supply designs. Consider the 12 A current rating for load matching networks. The surface mount format facilitates automated assembly processes in manufacturing environments requiring compact footprints.

Part Context

This device belongs to the LdmoST family of RF transistors by STMicroelectronics. These components are engineered for robust performance in radio frequency environments. The LET9060F specifically targets applications needing reliable power amplification with efficient heat dissipation through its dedicated package structure.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.