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The LET9060S is an LDMOS transistor designed for RF power amplifier applications, specifically targeting two-way radio base transceiver stations and general wireless services. It operates within a frequency range of 760 MHz to 870 MHz and requires a supply voltage of 28 V to 32 V. The device delivers an output power of 100 W with a minimum gain of 14 dB and a minimum efficiency of 45%. It maintains stability under load VSWR conditions up to 5:1. The component is BeO-free and RoHS compliant.
Verify the current lifecycle status before procurement, as the associated demonstration board STEVAL-TDR030V1 is marked NRND. Confirm that the specific package and pinout match the design requirements for the intended push-pull amplifier topology. Ensure compliance with RoHS standards and BeO-free material specifications if required by the final product regulations.
Select this component for designs requiring 100 W output power in the 760-870 MHz band. Ensure the circuit supports a 28 V to 32 V supply and can handle the thermal dissipation associated with 45% minimum efficiency. Verify that the PCB layout accommodates the balanced microstrip lines and planar balun integration necessary for proper signal management.
The LET9060S serves as the core active element in the STEVAL-TDR030V1 demonstration board. This evaluation platform illustrates the implementation of a push-pull Class AB power amplifier using two LET9060S transistors. The board highlights the use of embedded planar baluns for managing balanced versus unbalanced signals in RF power stages.
The device maintains stability with a minimum Load VSWR of 5:1.
Yes, the component is RoHS compliant and BeO-free.
It is utilized in push-pull Class AB power amplifier configurations.