LET9070FB

Overview

The LET9070FB is an N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications. It operates in a common-source configuration with a 28V rating. Key electrical parameters include a 70W output power, 16dB gain, and operation at 945MHz. The device features a power dissipation of 130W and utilizes the M250 package.

Feature Summary

• N-channel enhancement-mode lateral FET structure
• Common-source RF power transistor design
• Broadband capability for commercial and industrial use

Applications

• Broadband RF amplification
• Commercial signal processing
• Industrial RF systems

Procurement Notes

Verify the specific ordering suffix to ensure compatibility with required packaging formats. Confirm that the M250 package variant matches the intended thermal management and PCB layout requirements. Cross-reference the datasheet specifications against the target application's frequency and power demands to validate performance suitability before finalizing procurement.

Selection Notes

Select this component when a 28V lateral MOSFET is required for broadband RF applications. Ensure the design accommodates the 130W power dissipation and 70W output power capabilities. Verify that the M250 package fits the mechanical constraints and that the 16dB gain meets the system's amplification needs without excessive external circuitry.

Part Context

This part belongs to STMicroelectronics' range of RF MOSFET transistors. It is specifically engineered as a lateral DMOS device for high-frequency operations. The LET series focuses on providing robust solutions for commercial and industrial RF environments requiring reliable power amplification.

Replacement Considerations

Consult official substitution lists for compatible lateral RF MOSFETs. Verify pinout compatibility and electrical parameter alignment with the original design requirements before implementing any alternative components.