LGB8206ATI

LGB8206ATI

$0.69
  • Description:IGBT 390V 20A 150W D2PAK3
  • Series:*

SKU:9ab270a774c5 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 390V 20A 150W D2PAK3
  • Series:*
  • Mfr:Littelfuse Inc.
  • Package:Tape & Reel (TR)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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LGB8206ATI

Overview

The LGB8206ATI is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Littelfuse Inc. It features a collector-emitter voltage rating of 390V and a continuous collector current capacity of 20A. The device is designed for power switching applications with a maximum power dissipation of 150W. It utilizes a D2PAK-3 surface-mount package to facilitate thermal management in compact designs. Key electrical limits include a repetitive peak collector-emitter voltage of 3000V under specific test conditions and a gate-emitter voltage rating suitable for standard drive circuits.

Feature Summary

  • High-voltage blocking capability for demanding power switching environments
  • Surface-mount D2PAK-3 packaging for efficient thermal dissipation
  • Robust on-state characteristics optimized for efficiency

Applications

  • Power supply units
  • Motor control systems
  • Inverter circuits

Procurement Notes

Verify the component status as obsolete before procurement planning. Confirm that the D2PAK-3 package dimensions align with the target PCB footprint. Ensure the replacement strategy accounts for the discontinuation of this specific Littelfuse part number.

Selection Notes

Select this IGBT for applications requiring 390V blocking voltage and 20A current handling in a surface-mount form factor. Evaluate thermal requirements against the 150W dissipation limit. Consider the availability of direct substitutes if new production is required.

Part Context

This component belongs to the single IGBT category within Littelfuse's power semiconductor portfolio. It serves as a discrete switching element, distinct from modules or multi-chip assemblies, providing a standalone solution for medium-power electronic designs.

Replacement Considerations

The NGB8206ANT4G is identified as a direct electrical substitute. This alternative matches the 390V rating, 20A current, 150W power dissipation, 1.9V on-state voltage, and D2PAK packaging specifications.

FAQ

What is the maximum collector-emitter voltage?

The continuous collector-emitter voltage is rated at 390V.

Does this component use a through-hole package?

No, it utilizes a D2PAK-3 surface-mount package.

LGB8206ATILGB8206ATI
$0.69
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