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The LGB8206ATI is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Littelfuse Inc. It features a collector-emitter voltage rating of 390V and a continuous collector current capacity of 20A. The device is designed for power switching applications with a maximum power dissipation of 150W. It utilizes a D2PAK-3 surface-mount package to facilitate thermal management in compact designs. Key electrical limits include a repetitive peak collector-emitter voltage of 3000V under specific test conditions and a gate-emitter voltage rating suitable for standard drive circuits.
Verify the component status as obsolete before procurement planning. Confirm that the D2PAK-3 package dimensions align with the target PCB footprint. Ensure the replacement strategy accounts for the discontinuation of this specific Littelfuse part number.
Select this IGBT for applications requiring 390V blocking voltage and 20A current handling in a surface-mount form factor. Evaluate thermal requirements against the 150W dissipation limit. Consider the availability of direct substitutes if new production is required.
This component belongs to the single IGBT category within Littelfuse's power semiconductor portfolio. It serves as a discrete switching element, distinct from modules or multi-chip assemblies, providing a standalone solution for medium-power electronic designs.
The NGB8206ANT4G is identified as a direct electrical substitute. This alternative matches the 390V rating, 20A current, 150W power dissipation, 1.9V on-state voltage, and D2PAK packaging specifications.
The continuous collector-emitter voltage is rated at 390V.
No, it utilizes a D2PAK-3 surface-mount package.