LGD18N45TH

$0.51

Description：IGBT 500V 18A TO-252
Series：-

SKU:a2819ef7a337 Category: Single IGBTs Brand: Littelfuse Inc.

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Product introduction

Product Detailed Parameters

Description：IGBT 500V 18A TO-252
Series：-
Mfr：Littelfuse Inc.
Package：Tape & Reel (TR)
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：500 V
Current - Collector (Ic) (Max)：18 A
Current - Collector Pulsed (Icm)：50 A
Vce(on) (Max) @ Vge, Ic：-
Power - Max：115 W
Switching Energy：-
Input Type：Logic
Gate Charge：-
Td (on/off) @ 25°C：0.42µs/2.9µs
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：TO-252 (DPAK)
Grade：Automotive
Qualification：AEC-Q101

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LGD18N45TH

Overview

The Littelfuse LGD18N45TH is a 450 V, 18 A N-Channel Ignition IGBT featuring monolithic circuitry for ESD and inductive coil drivers. It operates within a -55 to +175 °C junction temperature range with a maximum collector-emitter voltage of 500 VDC and continuous current of 18 ADC. The device includes emitter ballasting for short-circuit capability and offers low threshold voltage for logic interfacing.

Feature Summary

Monolithic integration of ESD protection and inductive coil drivers
Emitter ballasting provides enhanced short-circuit withstand capability
Low threshold voltage enables direct interface with logic or microprocessor devices
Voltage clamp limits stress applied to the load

Applications

Ignition systems
Direct fuel injection circuits
High voltage switching applications
High current switching applications

Procurement Notes

Verify the specific suffix 'H' corresponds to the emitter ballast structure design as indicated in the part numbering section. Confirm the DPAK package type and Pb-Free status match project requirements. Ensure the tape and reel packing option aligns with automated assembly capabilities. Cross-reference the latest datasheet revision date against manufacturing timelines.

Selection Notes

Select this component when high voltage and high current switching are required in automotive or industrial environments. The low saturation voltage and high pulsed current capability make it suitable for demanding loads. Verify that the operating junction temperature range meets the thermal constraints of the enclosure. Consider the DPAK footprint for board space optimization compared to larger packages.

Part Context

This device belongs to Littelfuse's Logic Level Insulated Gate Bipolar Transistor (IGBT) portfolio. It is designed specifically for ignition and fuel injection applications where robust switching and integrated protection features are critical. The product combines power handling with control interface simplicity.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Littelfuse technical support for cross-reference information regarding equivalent logic level IGBTs with similar voltage and current ratings.

FAQ

What is the purpose of the emitter ballasting feature?

The emitter ballasting provides short-circuit capability, allowing the device to withstand short-circuit events for specified durations without destruction.

How does the low threshold voltage benefit the circuit design?

The low threshold voltage allows the IGBT to directly interface with logic or microprocessor devices, simplifying the gate drive circuitry requirements.