LN100LA-G

$1.22

Description：MOSFET 2N-CH 1200V 6LFGA
Series：-

SKU:ed431889321b Category: FET, MOSFET Arrays Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

LN100LA-G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET 2N-CH 1200V 6LFGA. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for LN100LA-G

Description：MOSFET 2N-CH 1200V 6LFGA
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Cascoded)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：3000Ohm @ 2mA, 2.8V
Vgs(th) (Max) @ Id：1.6V @ 10µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
Power - Max：350mW
Operating Temperature：-25°C ~ 125°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-VFLGA
Supplier Device Package：6-LFGA (3x3)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for LN100LA-G

LN100LA-G

FET, MOSFET Arrays Overview

The LN100LA-G is a 1200V cascoded N-channel MOSFET manufactured by Supertex Inc. It features an integrated high-value resistor divider with a ratio of 1000:1, enabling control via low-voltage circuitry. The device has a maximum gate-to-source threshold voltage of 1.6V and operates within a temperature range of -25°C to +125°C. Packaged in a compact 3x3 LFGA format, it supports drain-to-source voltages up to 1200V and includes internal Zener clamping for gate protection.

FET, MOSFET Arrays Feature Summary

Integrates a 1000:1 high-voltage resistor divider to facilitate low-voltage gate control
Features a cascoded N-channel MOSFET architecture for high breakdown voltage handling
Includes internal Zener diode clamp for gate-to-source protection
Designed for minimal power consumption through high-value internal resistors

FET, MOSFET Arrays Applications

High voltage shunt regulator circuits
High voltage linear amplifier stages
High voltage digital pulser systems

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Supertex Inc., noting that Microchip Technology acquired Supertex. Confirm the package type is 6-Lead LFGA and check for RoHS compliance indicated by the 'G' suffix. Ensure the specific lot and date codes align with project requirements before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring direct high-voltage switching or regulation controlled by standard logic levels. The integrated divider simplifies biasing networks. Consider the thermal resistance and operating temperature limits when designing heat dissipation strategies for enclosed environments.

FET, MOSFET Arrays Part Context

This part belongs to the LN100 family of high-voltage MOSFETs designed for specialized analog and power control applications. It replaces discrete high-voltage solutions by integrating sensing and switching capabilities into a single compact package, reducing board space and component count.