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Product Detailed Parameters
- Description：JFET 2N-CH 25V TO78-6
- Series：LS5912C
- Mfr：Linear Integrated Systems, Inc.
- Package：Bulk
- FET Type：2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：7 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：500 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：-
- Qualification：-
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Overview
The LS5912C is a monolithic dual N-channel JFET amplifier designed as an improved replacement for legacy discrete devices. It features low noise performance with an equivalent input noise voltage of approximately 4nV/√Hz at 10kHz and high transconductance exceeding 4000µS at 100MHz. The device operates within a junction temperature range of -55°C to +150°C, supporting continuous power dissipation up to 500mW. Key electrical limits include a gate-to-source breakdown voltage of -25V and a drain-to-source saturation current typically ranging from 7mA to 40mA.
Feature Summary
- Monolithic integration of dual N-channel JFETs for matched characteristics
- Low noise operation suitable for precision analog applications
- High transconductance capability across wide frequency ranges
- Enhanced thermal stability with extended operating temperature range
Applications
- Precision instrumentation amplifiers
- Low-noise audio preamplifiers
- Wideband signal processing circuits
- High-impedance sensor interfaces
Procurement Notes
Verify the specific package variant against the datasheet pinout diagrams, as the LS5912C is available in multiple configurations including SOT-23, PDIP-A, PDIP-B, SOIC-A, and SOIC-B. Confirm that the ordering suffix corresponds to the required physical footprint and lead configuration. Ensure compliance with RoHS standards if restricted materials are prohibited in the target assembly process.
Selection Notes
Select this component when superior noise performance and higher transconductance are required compared to standard JFET alternatives. The LS5912C offers tighter matching specifications for differential applications, making it ideal for balanced input stages. Consider the available package options to match PCB layout constraints while maintaining thermal management requirements for continuous power dissipation.
Part Context
Linear Integrated Systems manufactures the LS5912C as part of its precision semiconductor portfolio, leveraging expertise from historical industry leaders. This dual JFET amplifier serves as a direct upgrade path for older designs utilizing separate discrete components or earlier generation integrated pairs, providing improved consistency and performance in compact form factors.
Replacement Considerations
The LS5912C is documented as an improved replacement for the 2N5911 and 2N5912 discrete devices. Verify pin compatibility and electrical parameter margins when transitioning from these legacy parts to ensure circuit stability without redesign.
