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The LSK170C SOT-23 3L ROHS is a single N-channel JFET in an SOT-23 package. It features a Gate to Source Breakdown Voltage (BVGSS) of -40V minimum and Drain to Source Saturation Current (IDSS) ranging from 10.0mA to 20.0mA at VDS=10V, VGS=0. The device provides a typical transconductance (Gfs) of 22mS and exhibits ultra-low noise voltage of 0.9nV/√Hz at 1kHz. Input capacitance is 20pF maximum.
Verify the specific 'LSK170C' grading matches the required 10.0mA to 20.0mA IDSS range for your circuit design. Confirm the SOT-23 3L package orientation and pinout (Drain-Gate-Source) aligns with your PCB footprint. Ensure RoHS compliance requirements are met by checking the ordering suffix. Cross-reference datasheet electrical characteristics against your operating conditions.
Select this component when designing circuits requiring ultra-low noise at both high and low frequencies. The C-grade offers higher saturation current than A or B grades, suitable for specific biasing needs. Consider the SOT-23 package for compact, embeddable designs where space is critical. Evaluate the trade-off between low capacitance and IDSS stability for your specific application constraints.
This part belongs to the LSK170 series of high input impedance, ultra-low noise JFETs manufactured by Linear Integrated Systems. The series includes variants in TO-92, SOT-89, and SOT-23 packages, with different IDSS grades (A, B, C, D). It serves as an improved functional replacement for Interfet devices like IF1320 and IF1330.
Officially documented replacements include Toshiba's 2SK170 (pin-for-pin) and Interfet models IF1320, IF1330, IF1331, and IF4500 (functional). Verify electrical parameter compatibility before substitution.
The typical noise voltage is 0.9nV/√Hz at 1kHz.
Yes, it is designed as a direct pin-for-pin replacement for Toshiba's 2SK170.
The continuous power dissipation is 400mW at +25°C.