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Product Detailed Parameters
- Description：JFET N-CH 40V 10MA TO92
- Series：LSK170C
- Mfr：Linear Integrated Systems, Inc.
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：10 mA @ 10 V
- Current Drain (Id) - Max：10 mA
- Voltage - Cutoff (VGS off) @ Id：200 mV @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：20pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：400 mW
- Operating Temperature：-55°C ~ 135°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92
- Grade：-
- Qualification：-
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Overview
The LSK170C is a single N-channel JFET in a TO-92 3L package, designed for ultra-low noise and high input impedance applications. It features a Gate to Source Breakdown Voltage (BVGSS) of -40V minimum and a Drain to Source Saturation Current (IDSS) range of 10.0mA to 20.0mA at VDS=10V, VGS=0. The device offers a typical transconductance (Gfs) of 22mS and an equivalent input noise voltage of 0.9nV/√Hz at 1kHz. Input capacitance is limited to 20pF maximum.
Feature Summary
- Ultra-low noise performance with a narrow IDSS range optimized for low-noise applications
- High input impedance and high breakdown voltage for maximum linear headroom
- Direct pin-for-pin replacement for Toshiba's 2SK170
Applications
- Audio amplifiers and preamps
- Discrete low-noise operational amplifiers
- Microphones and acoustic sensors
- Electrometers and vibrations detectors
Procurement Notes
Verify the specific grade suffix 'C' corresponds to the required IDSS range of 10.0mA to 20.0mA for your circuit design. Confirm RoHS compliance status if non-standard variants are considered. Ensure the TO-92 3L package matches your PCB footprint requirements. Contact the manufacturer directly for tighter specification selections or custom part availability.
Selection Notes
Select the LSK170C when a moderate saturation current between 10mA and 20mA is needed alongside ultra-low noise characteristics. This grade provides a balance between the lower current A/B grades and the higher current D grade. Consider the narrow IDSS range for ease of design in low-voltage applications where consistent biasing is critical.
Part Context
The LSK170 series includes grades A, B, C, and D, differentiated primarily by their Drain to Source Saturation Current (IDSS). The LSK170C specifically targets designs requiring higher current drive capability than the A or B grades while maintaining low noise. It serves as an improved functional replacement for Interfet models IF1320, IF1330, IF1331, and IF4500.
Replacement Considerations
- Toshiba 2SK170
FAQ
What is the Gate to Source Pinch-off Voltage (VGS(OFF)) range for the LSK170C?
The VGS(OFF) range is -0.2V to -2.0V, measured at VDS = 10V and ID = 1nA.
How does the LSK170C compare to the LSK389?
The LSK389 series is the equivalent monolithic-dual version of the LSK170 single JFET.
Is the LSK170C suitable for portable battery-operated applications?
Yes, the narrow ranges of IDSS promote ease of design, particularly in low voltage applications, making it ideal for portable battery-operated devices.
