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The LSK170D is a single N-channel JFET in an SOT-23 3L package. It features a Gate to Source Breakdown Voltage (BVGSS) of -40.0V minimum and a Drain to Source Saturation Current (IDSS) range of 18.0mA to 30.0mA at VDS=10V, VGS=0. The device offers a typical Full Conduction Transconductance (Gfs) of 22.0mS and ultra-low noise voltage of 0.9nV/√Hz at 1kHz. Input capacitance is 20.0pF maximum.
Verify the specific suffix 'D' corresponds to the required IDSS grading (18.0mA to 30.0mA). Confirm RoHS compliance status as standard parts are compliant. Ensure the SOT-23 3L package matches the PCB footprint. Check datasheet for lot sampling guarantees on voltage specifications.
Select this part when low noise and high input impedance are critical. The D grade provides higher saturation current than A, B, or C grades. Suitable for portable battery-operated applications due to narrow IDSS range. Consider the LSK389 series if a monolithic dual configuration is needed instead.
Part of the LSK170 series designed for audio, instrumentation, medical, and sensor markets. The series includes TO-92, SOT-23, and SOT-89 packages. It serves as an improved functional replacement for Interfet IF1320, IF1330, IF1331, and IF4500 devices.
The Gate to Source Pinch-off Voltage (VGS(OFF)) ranges from -0.2V to -2.0V.
Yes, it features high BVDSS for maximum linear headroom in such applications.
The Typical Conduction Transconductance (Gfs) is between 6.0mS and 10.0mS under these conditions.