LXS101-23-3/TR

RF Diode Overview

The LXS101-23-3/TR is a radio frequency PIN diode manufactured by Microchip Technology, designed for high-frequency switching and attenuation applications. It features a single series pair configuration housed in an SOT-23-3 surface-mount package. The device supports a maximum peak reverse voltage of 50V and a maximum forward current of 100mA. Key electrical characteristics include a maximum power dissipation of 250mW and a capacitance of 0.32pF at 50V reverse bias and 1MHz frequency. The resistance is specified as 4 ohms at 100mA forward current and 100MHz frequency. It operates within a temperature range of -55°C to 125°C.

RF Diode Feature Summary

• Single series pair RF PIN diode structure optimized for signal path control
• Low capacitance characteristic enabling high-frequency signal integrity
• Compact SOT-23-3 surface-mount packaging for automated assembly

RF Diode Applications

• RF switch circuits requiring low insertion loss
• Variable attenuator modules in communication systems
• Phase shifter networks in antenna arrays

RF Diode Procurement Notes

Verify the specific suffix /TR indicates tape and reel packaging when ordering. Confirm the manufacturer part number matches the required pin configuration and electrical ratings. Ensure compatibility with RoHS3 standards if environmental compliance is mandatory for the production line. Cross-reference the datasheet for handling precautions related to the SOT-23-3 package.

RF Diode Selection Notes

Select this component based on its 50V peak reverse voltage rating and 100mA current capacity relative to the circuit's power requirements. Evaluate the 0.32pF capacitance value against the operating frequency to ensure minimal signal degradation. Compare the 4-ohm resistance specification with system impedance matching needs. Consider the -55°C to 125°C operating range for environmental suitability.

RF Diode Part Context

This part belongs to the LXP1000-LXP1011 family of RF PIN diodes from Microchip Technology. These devices are engineered for robust performance in demanding RF environments. The family offers various configurations to suit different power and frequency applications. The LXS101 variant specifically addresses compact design constraints while maintaining high reliability.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers for LXS101-23-3/TR are not available in the provided documentation. Verify functional equivalence with other Microchip LXP series components or competitor parts only after detailed parameter comparison.