RF Diode LXS201-23-1/TR product image

LXS201-23-1/TR

$4.38
  • Description:DIODE SCHOTTKY 3V 250MW SOT233
  • Series:LSX

SKU:8d27e16c3682 Category: Brand:

  
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LXS201-23-1/TR is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE SCHOTTKY 3V 250MW SOT233. Review the specifications below when checking this part for your BOM.

RF Diode specifications for LXS201-23-1/TR

  • Description:DIODE SCHOTTKY 3V 250MW SOT233
  • Series:LSX
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):3V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:0.3pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-55°C ~ 125°C
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for LXS201-23-1/TR

LXS201-23-1/TR

RF Diode Overview

The LXS201-23-1/TR is a single silicon Schottky diode manufactured by Microchip Technology, designed for surface-mount applications. It features a SOT-23-3 package and operates within a temperature range of -55°C to +125°C. Key electrical specifications include a maximum forward current of 1 A, a peak reverse voltage of 3 V, and a power dissipation rating of 250 mW. The device exhibits a typical forward voltage of 350 mV at rated current and a reverse leakage current of 100 nA.

RF Diode Feature Summary

  • Utilizes silicon Schottky technology for low forward voltage drop and fast switching performance
  • Non-hermetic plastic surface-mount construction in a compact SOT-23-3 package
  • Rated for high operating temperatures up to +125°C

RF Diode Applications

  • RF rectification circuits
  • Power supply protection
  • Signal demodulation

RF Diode Procurement Notes

Verify the component datasheet for specific electrical characteristics and absolute maximum ratings prior to integration. Confirm that the SOT-23-3 package dimensions align with the target PCB footprint. Ensure thermal management strategies account for the 250 mW power dissipation limit under expected operating conditions.

RF Diode Selection Notes

Select this component for designs requiring a single Schottky diode with a 1 A current rating and 3 V reverse voltage capability. The wide operating temperature range makes it suitable for industrial environments. Consider the SOT-23-3 form factor for space-constrained surface-mount layouts.

RF Diode Part Context

This part belongs to Microchip's discrete semiconductor portfolio, specifically within the Schottky diodes and rectifiers category. It complements other RF and general-purpose diodes offered by the manufacturer, providing reliable performance for signal processing and power management tasks in embedded systems.

RF Diode Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence when considering cross-references from other manufacturers.

LXS201-23-1/TRLXS201-23-1/TR
$4.38
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