RF Diode LXS701-23-4 product image

LXS701-23-4

$4.77
  • Description:DIODE SCHOTTKY 70V 250MW SOT233
  • Series:-

SKU:92e716d9f286 Category: Brand:

  
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LXS701-23-4 is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE SCHOTTKY 70V 250MW SOT233. Review the specifications below when checking this part for your BOM.

RF Diode specifications for LXS701-23-4

  • Description:DIODE SCHOTTKY 70V 250MW SOT233
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Type:Schottky - 1 Pair Common Cathode
  • Voltage - Peak Reverse (Max):70V
  • Current - Max:1:00 AM
  • Capacitance @ Vr, F:2pF @ 0V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-55°C ~ 125°C
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for LXS701-23-4

LXS701-23-4

RF Diode Overview

The LXS701-23-4 is a Schottky barrier diode manufactured by Microchip Technology, designed for radio frequency applications. It features a dual configuration with one pair of common cathodes. The device supports a maximum repetitive peak reverse voltage of 70V and a maximum average forward current of 1A. Power dissipation is rated at 250mW. Capacitance is specified as 2pF at 0V bias and 1MHz frequency. The component operates within a temperature range of -55°C to +125°C and is housed in an SOT-23-3 package.

RF Diode Feature Summary

  • Dual common cathode Schottky configuration optimized for RF circuits
  • Low junction capacitance suitable for high-frequency signal processing
  • Wide operating temperature range for robust environmental performance

RF Diode Applications

  • RF rectification circuits
  • Signal detection and demodulation
  • High-speed switching applications

RF Diode Procurement Notes

Verify the specific ordering suffix to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status against the latest manufacturer documentation before integration. Check for any recent product change notices regarding pinout or material composition updates.

RF Diode Selection Notes

Select this component when a low-capacitance Schottky diode is required for RF frequencies up to the specified limits. Ensure the 70V reverse voltage rating exceeds the peak circuit voltages. Verify that the SOT-23-3 footprint matches the PCB design constraints and thermal requirements.

RF Diode Part Context

This part belongs to the LXS series of RF Schottky diodes from Microchip Technology. It is distinct from general-purpose rectifiers due to its optimized junction characteristics for high-frequency operation. The SOT-23-3 package provides a compact solution for space-constrained RF designs.

RF Diode Replacement Considerations

Consult official Microchip documentation for qualified substitutes. Verify electrical parameters such as capacitance and reverse leakage current match the original design requirements before substitution.

LXS701-23-4LXS701-23-4
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