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LXS701-23-4 is listed in the RF Diode range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE SCHOTTKY 70V 250MW SOT233. Review the specifications below when checking this part for your BOM.
The LXS701-23-4 is a Schottky barrier diode manufactured by Microchip Technology, designed for radio frequency applications. It features a dual configuration with one pair of common cathodes. The device supports a maximum repetitive peak reverse voltage of 70V and a maximum average forward current of 1A. Power dissipation is rated at 250mW. Capacitance is specified as 2pF at 0V bias and 1MHz frequency. The component operates within a temperature range of -55°C to +125°C and is housed in an SOT-23-3 package.
Verify the specific ordering suffix to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status against the latest manufacturer documentation before integration. Check for any recent product change notices regarding pinout or material composition updates.
Select this component when a low-capacitance Schottky diode is required for RF frequencies up to the specified limits. Ensure the 70V reverse voltage rating exceeds the peak circuit voltages. Verify that the SOT-23-3 footprint matches the PCB design constraints and thermal requirements.
This part belongs to the LXS series of RF Schottky diodes from Microchip Technology. It is distinct from general-purpose rectifiers due to its optimized junction characteristics for high-frequency operation. The SOT-23-3 package provides a compact solution for space-constrained RF designs.
Consult official Microchip documentation for qualified substitutes. Verify electrical parameters such as capacitance and reverse leakage current match the original design requirements before substitution.
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