M1F45M12W2-1LA

FET, MOSFET Arrays Overview

The M1F45M12W2-1LA is an automotive-grade silicon carbide (SiC) MOSFET power module from STMicroelectronics, housed in the ACEPACK DMT-32 package. It features a fourpack topology with six channels and integrates an NTC temperature sensor. Key electrical parameters include a drain-source breakdown voltage of 1200 V, a typical on-resistance of 47.5 mΩ, and a continuous drain current of 30 A. The gate-source voltage range spans from -10 V to +22 V, with a threshold voltage of 5 V. Operating temperatures range from -40°C to +175°C, and the module meets AQG-324 qualification standards.

FET, MOSFET Arrays Feature Summary

• AQG-324 qualified for automotive reliability requirements
• Utilizes Cu-AlN-Cu DBC substrate for enhanced thermal performance
• Integrated NTC sensor for real-time junction temperature monitoring
• Grooved molding design ensures high creepage distance

FET, MOSFET Arrays Applications

• DC/DC converter stage of On-Board Chargers (OBC)
• Hybrid electric vehicle power systems
• Electric vehicle traction inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal specifications. Ensure that the selected variant matches the required automotive grade certification and packaging type for your assembly process. Cross-reference the part number with authorized distributors to confirm current production status and availability constraints before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when designing high-efficiency DC/DC converters requiring high power density and robust thermal management. The SiC technology supports high switching frequencies while minimizing energy losses. Consider the integrated NTC for precise thermal protection loops. Verify that the system voltage does not exceed the 1200 V blocking capability and that the gate drive signals align with the specified voltage limits.

FET, MOSFET Arrays Part Context

This module belongs to the ACEPACK DMT-32 series, designed specifically for compact, high-power automotive applications. It represents second-generation SiC MOSFET technology from STMicroelectronics, balancing low conduction losses with efficient switching characteristics. The series targets complex topologies demanding high efficiency and reliability in harsh automotive environments.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes within the same family include M1P45M12W2-1LA, which shares similar electrical ratings but utilizes a different internal topology configuration. Evaluate thermal interface requirements and mechanical footprint compatibility when considering alternative packages or manufacturers.