M1P45M12W2-1LA

FET, MOSFET Arrays Overview

The M1P45M12W2-1LA is an automotive-grade silicon carbide (SiC) power module from STMicroelectronics, housed in the ACEPACK DMT-32 package. It features a sixpack topology with six channels and a 1200 V drain-source breakdown voltage. The typical on-resistance is 47.5 mOhm, with a maximum of 60.5 mOhm. Continuous drain current is rated at 30 A. Operating junction temperature reaches 175 °C, supported by a Cu-AlN-Cu substrate for thermal management. The module includes an integrated NTC sensor and meets AQG-324 qualification standards.

FET, MOSFET Arrays Feature Summary

• Sixpack topology utilizing second-generation SiC MOSFET technology for high efficiency
• Cu-AlN-Cu insulated substrate design optimizing thermal performance and heat dissipation
• AQG-324 qualified for rigorous automotive reliability requirements
• Integrated NTC temperature sensor for precise thermal monitoring

FET, MOSFET Arrays Applications

• On-board chargers (OBC) for electric vehicles
• DC/DC converters for hybrid and electric vehicles
• Industrial motor control systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm the specific revision level matches project requirements. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet. Validate that the AQG-324 certification documentation is available for automotive compliance audits. Check for any specific handling instructions regarding the press-fit installation method.

FET, MOSFET Arrays Selection Notes

Select this module when designing high-power density converters requiring 1200 V blocking capability. The sixpack configuration suits three-phase inverter applications or complex DC/DC topologies. Consider the 47.5 mOhm on-resistance for conduction loss calculations. The AlN substrate offers superior thermal conductivity compared to standard DBC substrates. Ensure gate drive circuits accommodate the specified Vgs range of -10 V to +22 V.

FET, MOSFET Arrays Part Context

This part belongs to the STPOWER ACEPACK DMT-32 portfolio, which targets high-efficiency power conversion. It complements other variants like the fourpack M1F45M12W2-1LA for different channel counts. The series supports designs up to 22 kW, focusing on reducing system volume while maintaining high switching frequencies. It is part of ST's broader SiC solution set for EV and industrial markets.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible alternatives within the same family include M2P45M12W2-1LA. Verify electrical parameters and topology differences before substitution. Cross-referencing with non-ST modules requires careful evaluation of thermal resistance and gate charge characteristics.