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The MA26376 is a silicon epitaxial planar variable capacitance diode designed for UHF wireless telegraphic voltage-controlled oscillators. It operates within a reverse voltage range of up to 6V and maintains a junction temperature limit of 125°C. Key electrical characteristics include a typical diode capacitance of 16.00 pF at 1V reverse bias, decreasing to 8.90 pF at 3V. The device exhibits a low series resistance of 0.3 Ω at 470 MHz when capacitance is 9 pF. Reverse current is limited to 10 nA at maximum rated voltage.
Verify component status via official Panasonic semiconductor channels before procurement. The datasheet indicates maintenance or discontinuation lifecycle stages may apply. Confirm availability and latest specifications directly with authorized distributors or sales staff to ensure compliance with current product standards.
Select this component for applications requiring stable capacitance variation over a wide voltage range in UHF circuits. Ensure operating conditions remain within the 6V reverse voltage and 125°C junction temperature limits. Consider the ML3-N2 package dimensions for PCB layout compatibility.
This component belongs to the category of silicon epitaxial planar variable capacitance diodes. It is specifically engineered for high-frequency oscillator applications where precise tuning and low loss are critical requirements.
Consult official Panasonic documentation for verified substitute part numbers. No direct public substitutes are listed in the provided datasheet.
The absolute maximum reverse voltage rating is 6V.
Capacitance decreases as reverse voltage increases, dropping from a typical 16.00 pF at 1V to 8.90 pF at 3V.
The device uses the ML3-N2 surface-mount package.