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The MA26V0100A is a silicon epitaxial planar variable capacitance diode designed for Voltage Controlled Oscillator (VCO) applications. It features good linearity and a large capacitance ratio in the CD-VR relationship, alongside small series resistance. The device operates with a maximum reverse voltage of 6 V and a junction temperature rating of 125 °C. At 1 MHz, the typical diode capacitance is 17.0 pF at 1 V reverse bias and 7.0 pF at 3 V reverse bias, yielding a capacitance ratio of 2.2. The component utilizes an ML3-N2 package.
Verify current lifecycle status before procurement as this component may be discontinued or under maintenance. Confirm that the ML3-N2 package dimensions align with your PCB footprint requirements. Ensure design parameters remain within the absolute maximum ratings of 6 V reverse voltage and 125 °C junction temperature to prevent device failure.
Select this component when a high capacitance value around 17 pF at low reverse bias is required for VCO tuning ranges. The specific capacitance ratio of 2.2 between 1 V and 3 V biases should be evaluated against circuit tuning linearity needs. Verify that the 1 Ω series resistance at 470 MHz meets the quality factor requirements of the target RF application.
This part belongs to the Panasonic MA26V01 series of silicon epitaxial planar variable capacitance diodes. These components are specifically engineered for standard applications such as office equipment, communications gear, and measuring instruments. They comply with the RoHS Directive (EU 2002/95/EC).
Consult official manufacturer documentation for confirmed substitute part numbers. Cross-referencing requires matching the ML3-N2 package, 6 V reverse voltage rating, and similar capacitance values at 1 V and 3 V biases.