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The MA26V0300A is a silicon epitaxial planar variable capacitance diode designed for voltage-controlled oscillator (VCO) applications. It operates with a maximum reverse voltage of 6 V and a junction temperature rating of 125 °C. Key electrical characteristics include a diode capacitance of 5.80 pF at 1 V reverse bias and 2.58 pF at 4 V reverse bias, both measured at 1 MHz. The device achieves a capacitance ratio of 2.6 under these conditions. Series resistance is specified as 0.3 Ω at 470 MHz with 4 V reverse bias. The component utilizes an ML3-N2 surface-mount package.
Verify current lifecycle status before procurement, as this product may be discontinued or subject to maintenance plans. Confirm that the ML3-N2 package dimensions align with the target PCB layout. Ensure design parameters remain within the absolute maximum ratings, specifically the 6 V reverse voltage limit and 125 °C junction temperature threshold.
Select this component when a high capacitance ratio and low series resistance are required for VCO tuning circuits. The ML3-N2 package is appropriate for surface-mount assembly processes. Verify that the operating frequency range accommodates the specified series resistance measurement at 470 MHz. Consider thermal management to ensure the junction temperature does not exceed 125 °C during operation.
The MA26V0300A belongs to the MA26V03 series of variable capacitance diodes manufactured by Panasonic Industry. This series utilizes silicon epitaxial planar technology to deliver consistent performance for RF tuning applications. The part is distinct from other semiconductor categories such as resistors or electrolytic capacitors, focusing solely on varactor functionality.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources for potential cross-references or updated components if this part is discontinued.
The maximum reverse voltage (VR) rating is 6 V.
The capacitance ratio is defined as the ratio of diode capacitance at 1 V reverse bias to the capacitance at 4 V reverse bias (CD1V / CD4V).
The series resistance (rD) is typically 0.3 Ω when measured at 470 MHz with a 4 V reverse bias.