MA26V1100A

Overview

The MA26V1100A is a silicon epitaxial planar variable capacitance diode designed for Voltage Controlled Oscillator (VCO) applications. It operates within an 8V reverse voltage limit and a junction temperature range up to 125°C. Key electrical characteristics include a typical diode capacitance of 3.01 pF at 1V reverse bias and 1.34 pF at 4V, yielding a capacitance ratio between 2.16 and 2.34. The device features low series resistance of 0.35 Ω at 470 MHz and minimal reverse current of 10 nA at 5V.

Feature Summary

• Good linearity and large capacitance-ratio in CD-VR relation
• Small series resistance rD
• High frequency type by this low capacitance

Applications

• Voltage Controlled Oscillators (VCO)
• General electronic equipment
• Communications equipment

Procurement Notes

Verify the specific lifecycle status through official Panasonic channels before procurement, as the component may be classified under maintenance or discontinued stages. Confirm that the ML3-N2 package dimensions align with the target PCB footprint requirements during the design phase.

Selection Notes

Select this component when high-frequency operation and precise capacitance tuning are required. Ensure the operating environment remains within the specified -55°C to +125°C storage and 125°C junction temperature limits to maintain performance integrity.

Part Context

This part belongs to the MA26V series of variable capacitance diodes manufactured by Panasonic Industry. It utilizes a silicon epitaxial planar structure housed in an ML3-N2 surface-mount package, intended for standard commercial and industrial electronic applications.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify compatibility regarding package dimensions, electrical parameters, and lifecycle status before implementing any alternative components.