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The MA2C8400BF is a silicon epitaxial planar variable capacitance diode designed for UHF and VHF electronic tuner automatic frequency control (AFC) applications. It features a DO-34-A1 axial through-hole package with an extra-small DHD envelope allowing insertion into 5 mm pitch holes. The device operates with a maximum reverse voltage of 32 V and a junction temperature rating of 150°C. Key electrical characteristics include a diode capacitance of 5.7 pF at 10 V reverse bias and 1 MHz frequency, achieving a capacitance ratio of 3.4 between 2 V and 10 V conditions.
Verify the current lifecycle status before procurement as this component may be discontinued or under maintenance planning. Confirm that the DO-34-A1 package dimensions match the target PCB layout requirements. Ensure design compliance with absolute maximum ratings to prevent failure during transient states such as power-on or mode-switching.
Select this component when designing UHF or VHF tuners requiring a compact axial variable capacitance diode. Verify that the required capacitance ratio meets the specific AFC circuit needs, noting the available rank classifications. Ensure the operating environment stays within the specified junction temperature limits to maintain reliability.
This part belongs to the MA2C840 series of silicon epitaxial planar variable capacitance diodes manufactured by Panasonic Industry. The series is specifically engineered for general electronic equipment and communication devices where small size and stable tuning characteristics are required.
Consult official documentation for direct substitutes. Cross-reference pinout compatibility and capacitance ratios if considering alternative manufacturers. Verify that any replacement component supports the same DO-34-A1 package and meets the 32 V reverse voltage requirement.
The maximum peak reverse voltage (VRM) rating is 34 V.
The capacitance ratio is defined as the ratio of diode capacitance at 2 V reverse voltage to the capacitance at 10 V reverse voltage (CD(2V)/CD(10V)).
The series resistance (rD) is typically 1.2 Ω when measured at a diode capacitance of 9 pF and a frequency of 470 MHz.