MA4E1310

$2.99

Description：RF DIODE SCHOTTKY 7V CHIP
Series：-

SKU:068d3f69723b Category: RF Diodes Brand: MACOM Technology Solutions

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Product introduction

MA4E1310 is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 7V CHIP. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MA4E1310

Description：RF DIODE SCHOTTKY 7V CHIP
Series：-
Mfr：MACOM Technology Solutions
Package：Bulk
Diode Type：Schottky - Single
Voltage - Peak Reverse (Max)：7V
Current - Max：-
Capacitance @ Vr, F：0.45pF @ 0V, 1MHz
Resistance @ If, F：9Ohm @ 10.5mA, 1MHz
Power Dissipation (Max)：-
Operating Temperature：-65°C ~ 125°C
Package / Case：Die
Supplier Device Package：Chip
Grade：-
Qualification：-

RF Diode datasheet and documents for MA4E1310

MA4E1310

RF Diode Overview

The MA4E1310 is a gallium arsenide flip chip Schottky barrier diode fabricated on an OMCVD epitaxial wafer. It features silicon nitride passivation and polyimide scratch protection for automated handling. The device operates through millimeter wave frequencies up to 110 GHz with low parasitics. Key electrical specifications at +25 °C include a junction capacitance of 0.010 pF, total capacitance of 0.025–0.045 pF, slope resistance of 7–9 Ohms, forward voltage of 0.60–0.80 V at 1 mA, and reverse breakdown voltage of 4.5–7 V at 10 uA.

RF Diode Feature Summary

Flip chip configuration suitable for pick-and-place insertion
Silicon nitride passivation with polyimide scratch protection
High cutoff frequency enabling operation through millimeter wave bands

RF Diode Applications

Single and double balanced mixers in PCN transceivers and radios
Police radar detectors
Automotive radar detectors

RF Diode Procurement Notes

Verify the datasheet revision (Rev. V4) and specific ordering suffixes when sourcing. Confirm absolute maximum ratings, including incident LO/RF power limits (+20 dBm) and mounting temperature constraints (+235°C for 10 seconds). Ensure ESD precautions are followed during handling due to static sensitivity.

RF Diode Selection Notes

Select this component for high-frequency mixer applications requiring low series resistance and minimal parasitic capacitance. The GaAs material and flip chip design support operation up to 110 GHz. Consider the ODS-1278 case style and compatibility with conductive epoxy or low-temperature solder preforms for substrate integration.

RF Diode Part Context

This part belongs to MACOM's line of GaAs flip chip diodes, utilizing OMCVD epitaxial processes for high uniformity. It is distinct from PIN diodes or standard rectifiers, specifically engineered for RF mixing functions where low capacitance and high cutoff frequency are critical performance parameters.