MA4E1319-1

RF Diode Overview

The MA4E1319-1 is a gallium arsenide flip chip Schottky barrier diode configured as a reverse tee. It is fabricated on OMCVD epitaxial wafers to ensure high device uniformity and extremely low parasitics. The component features silicon nitride passivation and polyimide scratch protection, making it suitable for automated pick-and-place insertion. Key electrical specifications at +25°C include a typical junction capacitance of 0.0203 pF, total capacitance of 0.0453 pF, series resistance of 4 Ω, forward voltage of 0.70 V, and reverse breakdown voltage of 7.0 V.

RF Diode Feature Summary

• Flip chip configuration designed for easy circuit insertion via pick-and-place equipment
• Silicon nitride passivation with polyimide scratch protection for handling durability
• High cutoff frequency capability extending through millimeter wave frequencies

RF Diode Applications

• Single and double balanced mixers in PCN transceivers and radios
• Police radar detectors
• Automotive radar detectors

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the package type matches the required application substrate. Ensure ESD precautions are observed during handling due to the sensitivity of Schottky barrier diodes. Check for RoHS compliance status if required by the manufacturing process. Validate the mounting temperature limits to prevent damage during assembly.

RF Diode Selection Notes

Select this component when a reverse tee configuration is required for mixer applications. Consider the low parasitic capacitance and series resistance for high-frequency performance up to 80 GHz. Evaluate the GaAs material properties against silicon alternatives for noise figure requirements. Ensure the operating temperature range aligns with system environmental conditions.

RF Diode Part Context

This part belongs to the MACOM MA4Exxxx Series of GaAs Flip Chip Schottky diodes. Other parts in the series include the MA4E1317 single diode, MA4E1318 anti-parallel pair, and MA4E2160 uncon- nected anti-parallel pair. All share similar fabrication processes using OMCVD epitaxial wafers for high uniformity.

RF Diode Replacement Considerations

MADS-001317-1500 is an electrically equivalent part number offered by MACOM. This alternative can be mounted with Sn63/Pb37 solder, RoHS compliant solder, or conductive epoxy, unlike standard versions which may have different soldering constraints.