MA4E2037

RF Diode Overview

The MA4E2037 is a single GaAs beam lead Schottky diode from the MA4E20xx series. It features a total capacitance of 0.030 to 0.060 pF at 0 V, 1 MHz and a typical junction capacitance of 0.020 pF. The device exhibits a series resistance of 4.0 Ω (max 7.0 Ω) at +10 mA and a forward voltage of 0.60 to 0.80 V at +1 mA. Reverse breakdown voltage is specified between 4.5 V and 7.0 V at -10 µA. Operating temperature ranges from -65°C to +125°C with storage up to +150°C.

RF Diode Feature Summary

• Utilizes gallium arsenide material for high carrier mobility, resulting in lower series resistance compared to silicon equivalents.
• Features silicon nitride passivation and an additional polymer layer for scratch protection of the junction and anode air bridge.
• Designed for extremely low parasitics and high cut-off frequency suitable for millimeter wave applications.

RF Diode Applications

• Single and double balanced mixers in PCN transceivers and radios
• Automotive radar systems
• Police radar detectors

RF Diode Procurement Notes

Verify the specific ordering suffix and packaging configuration against the manufacturer's current documentation before procurement. Confirm that the gel pack quantity matches project requirements. Ensure handling procedures account for the sensitivity of beam lead devices to electrostatic discharge and mechanical distortion during assembly.

RF Diode Selection Notes

Select this component when low noise figure and conversion loss are critical due to the high carrier mobility of gallium arsenide. Consider the beam lead package format and required mounting techniques such as thermo-compression bonding or parallel-gap welding. Evaluate the total capacitance and series resistance specifications against the target RF frequency and impedance matching requirements.

RF Diode Part Context

The MA4E2037 belongs to the MA4E20xx series which includes the MA4E2039 anti-parallel pair and the MA4E2040 tee configuration. These devices share similar fabrication processes on OMCVD epitaxial wafers designed for high uniformity. The series is intended for high-performance RF applications requiring minimal parasitic effects.

RF Diode Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers within the MA4E20xx series or equivalent product lines. Do not assume interchangeability with other Schottky diodes without verifying electrical parameters and physical mounting constraints.

RF Diode FAQ

What is the recommended handling method for the beam leads?

Beam leads may be easily distorted or broken by normal pressure. A vacuum pencil with a #27 tip is recommended for picking and placing to avoid damage.

How is the series resistance determined?

Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 Ω.

What is the maximum incident power rating?

The absolute maximum incident power for both LO and RF is 20 dBm.