MA4E2508M-1112

RF Diode Overview

The MA4E2508M-1112 is a medium barrier silicon Schottky diode from the SURMOUNT series, configured as an anti-parallel pair in Case Style 1112. It operates within a frequency range of DC to 18 GHz and supports an operating temperature of -40°C to +125°C. Key electrical parameters include a maximum reverse voltage of 5 V, forward current rating of 20 mA, and RF CW incident power handling of 20 dBm. The device features a typical dynamic slope resistance (RS) of 9.6 Ω and a junction capacitance (CJ0) of 0.012 pF.

RF Diode Feature Summary

• SURMOUNT construction utilizing Heterolithic Microwave Integrated Circuit (HMIC) technology for low profile reliability
• Anti-parallel dual diode configuration with extremely low parasitic capacitance and inductance
• Surface mountable design eliminating the need for wirebonds
• Polyimide scratch protection on the top surface

RF Diode Applications

• Microwave mixers
• Sub-harmonic mixers
• Detectors
• Limiters

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type. The datasheet indicates that the -1112 suffix corresponds to Case Style 1112. Confirm whether the part is supplied as individual die in a carrier or on a reel by checking the specific product code details provided by the supplier.

RF Diode Selection Notes

Select this component for Ku band applications requiring low power handling capabilities. The medium barrier variant offers a balance between forward voltage drop and reverse leakage characteristics compared to low or high barrier options. Ensure the circuit design accommodates the 20 dBm RF power limit and the specified thermal dissipation requirements.

RF Diode Part Context

This device belongs to the MA4E2508 Series, which includes Low (L), Medium (M), and High (H) barrier variants. All models share the same HMIC fabrication process and Case Style 1112 outline but differ in their electrical barrier properties and dynamic resistance values.

RF Diode Replacement Considerations

The datasheet notes that these devices facilitate direct replacement of fragile beam lead diodes. Verify compatibility with existing hard or soft substrate circuits using standard solder attachment techniques.