MA4E2532L-1113

RF Diode Overview

The MA4E2532L-1113 is a SURMOUNT Low Barrier Silicon Schottky Ring Quad Diode fabricated using the Heterolithic Microwave Integrated Circuit (HMIC) process. It operates from DC to 18 GHz with a maximum forward voltage of 330 mV at 1 mA and typical capacitance of 0.10 pF. The device features extremely low parasitic inductance and capacitance, rugged construction with polyimide scratch protection, and lower susceptibility to electrostatic discharge damage compared to conventional beam lead diodes.

RF Diode Feature Summary

• Extremely low parasitic capacitance and inductance suitable for microwave circuits
• Rugged HMIC construction with polyimide scratch protection
• Surface mountable design eliminating the need for wirebonds
• Lower susceptibility to electrostatic discharge damage

RF Diode Applications

• Microwave mixers through Ku band frequencies
• Sub-harmonic mixers
• Detectors
• Limiters

RF Diode Procurement Notes

Verify the specific ordering suffix (W, Die, or T) required for your manufacturing process against the official MACOM datasheet. Confirm that the component status aligns with project timelines, as preliminary documentation indicates performance is based on engineering tests and volume production commitment may not be guaranteed.

RF Diode Selection Notes

Select the MA4E2532L-1113 for low barrier applications requiring operation up to 18 GHz. Ensure the circuit design accommodates the surface mount Case Style 1113 outline dimensions. Verify compatibility with hard or soft substrate soldering techniques, specifically utilizing recommended solder alloys like 80Au/20Sn or Sn63/Pb36/Ag2 for die attachment.

RF Diode Part Context

This component belongs to the MA4E2532 Series SURMOUNT Low & Medium Barrier Silicon Schottky Diodes. It utilizes the patented HMIC process, combining silicon pedestals with a glass dielectric to achieve excellent loss and power dissipation characteristics in a low-profile package.

RF Diode Replacement Considerations

The datasheet explicitly states these devices facilitate the direct replacement of more fragile beam lead diodes. No other specific substitute part numbers are documented in the provided source material.