MA4GP907

RF Diode Overview

The MA4GP907 is a Gallium Arsenide (GaAs) flip-chip PIN diode designed for millimeter wave switching and cutoff frequency applications. It features an ultra-low capacitance of 0.025 pF typical at -10 V reverse bias and 1 MHz, alongside a series resistance of 5.2 Ω typical at +10 mA forward current and 1 GHz. The device exhibits a switching speed of 2 ns and operates within a temperature range of -55°C to +125°C. Absolute maximum ratings include a reverse voltage of 50 V, CW incident power of 23 dBm, and dissipated power of 250 mW.

RF Diode Feature Summary

• Ultra-low parasitic capacitance and RC product optimized for high-frequency RF performance
• Flip-chip GaAs construction with silicon nitride passivation and polyimide scratch protection
• Capable of being driven directly by buffered TTL logic signals
• Designed for pulsed or continuous wave applications requiring single-digit nanosecond switching

RF Diode Applications

• Millimeter wave RF switches
• Phase shifter assemblies
• Microwave multi-throw switch configurations

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm packaging type. The standard part number corresponds to waffle pack packaging, while alternative suffixes indicate pocket tape options. Ensure compliance with RoHS directives as stated in the official documentation before finalizing procurement orders.

RF Diode Selection Notes

Select this component when circuit designs demand minimal series capacitance to prevent adverse loading on input ports in multi-throw switch architectures. The low RC product makes it suitable for applications where insertion loss and isolation must be maintained at frequencies extending into the millimeter wave spectrum.

RF Diode Part Context

This component belongs to MACOM's portfolio of Gallium Arsenide (GaAs) flip-chip PIN diodes. These devices utilize MOCVD grown epitaxy to ensure device-to-device uniformity and extremely low parasitics, distinguishing them from standard planar diodes in high-speed microwave environments.

RF Diode Replacement Considerations

The MADP-000907-14020 is identified as an AlGaAs solderable PIN diode variant featuring Cu-Ni-Au contact pads, allowing compatibility with both non-RoHS and RoHS solders.