MA4L011-1056

RF Diode Overview

The MA4L011-1056 is a silicon PIN limiter diode from the MA4L series, designed for high-signal applications. It utilizes gold-doped die to achieve lower carrier recovery times. The device is housed in the 1056 package style, which is a ceramic surface mount configuration with wrap-around contacts. Key electrical specifications include a breakdown voltage of 15V minimum and 35V maximum at 10 µA, a junction capacitance of 0.18 pF maximum at 1 MHz reverse biased at 10 V, and a series resistance of 2.10 ohms nominal at 500 MHz with 10 mA forward current. The I-region thickness is 2 mils (1.2 µm), and the contact diameter is 10 mils.

RF Diode Feature Summary

• Gold-doped silicon construction provides fast signal response and recovery times suitable for high-power switching.

RF Diode Applications

• Passive limiter control circuits
• Protection of sensitive receiver components such as low noise amplifiers (LNA)
• Protection of detectors and mixers

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm the exact package style and material composition. Ensure that the component meets all relevant environmental compliance standards required for your specific deployment before finalizing procurement orders.

RF Diode Selection Notes

Select this component when designing passive limiter circuits requiring fast recovery characteristics provided by gold doping. Verify that the 1056 ceramic surface mount package dimensions align with your PCB layout constraints and that the thermal resistance specifications are adequate for your expected power dissipation levels.

RF Diode Part Context

This part belongs to the MACOM MA4L, MADL, and MADP series of silicon PIN limiter diodes. These devices are engineered to provide low insertion loss at zero bias and low flat leakage power. The series covers various I-region lengths to accommodate different high-signal handling requirements across the 10 MHz to 18 GHz frequency range.

RF Diode Replacement Considerations

Other parts within the MA4L series, such as MA4L021 or MA4L031, offer different breakdown voltages and I-region thicknesses. Alternative package styles like 137 or 186 are available for the same base die if different mounting configurations are required.

RF Diode FAQ

What is the primary benefit of the gold-doped die used in the MA4L011?

The gold-doped die is specifically designed to provide lower carrier lifetime, resulting in faster signal response and recovery times compared to non-gold doped devices.

How is the MA4L011-1056 packaged?

It is supplied in the 1056 package style, which is described as a ceramic surface mount package with wrap-around contacts.

What is the typical junction capacitance of this diode?

The junction capacitance is typically 0.13 pF at 1 MHz with 10 V reverse bias, with a maximum specified value of 0.18 pF.