MA4L401-30

RF Diode Overview

The MA4L401-30 is a silicon PIN limiter diode from the MA4L series, designed for high signal applications. It features a non-gold doped die to achieve low flat leakage power and fast signal response/recovery times. The device provides low insertion loss at zero bias and handles high peak and average operating power. It is available in various packages, including ceramic pill styles like the ODS-30. Key electrical specifications include a breakdown voltage of 250V minimum and 300V maximum, a junction capacitance of 0.19 pF typical at 10V reverse bias, and a series resistance of 1.20 ohms maximum at 500 MHz. Nominal high signal performance at 9.4 GHz includes a recovery time of 30 ns, 60 dBm incident peak power limiting, and 40.0 dBm CW input power.

RF Diode Feature Summary

• Non-gold doped silicon construction optimized for low flat leakage power
• Fast signal response and recovery times suitable for high signal applications
• Low insertion loss and noise figure at zero bias
• High peak and average operating power handling capabilities

RF Diode Applications

• Passive limiter control circuits
• Protection of sensitive receiver components such as low noise amplifiers (LNAs)
• Protection of detectors and mixers in the 10 MHz to 18 GHz frequency range

RF Diode Procurement Notes

Verify the specific package suffix required for the application, as the base part number MA4L401 supports multiple case styles including chip, ceramic pill, and surface mount options. Confirm RoHS compliance status through official documentation before procurement. Ensure that ordering requirements align with the manufacturer's current packaging standards and availability constraints for discrete dies or assembled packages.

RF Diode Selection Notes

Select the MA4L401 variant when low flat leakage power is critical, distinguishing it from gold-doped alternatives which offer faster recovery but higher leakage. Consider the thermal resistance and package parasitics associated with the chosen case style, such as the ODS-30 ceramic pill, to ensure adequate heat dissipation and RF performance. Evaluate the breakdown voltage and series resistance against the circuit's maximum incident power and impedance matching requirements.

RF Diode Part Context

The MA4L401-30 belongs to the MA4L, MADL, and MADP series of silicon PIN limiter diodes manufactured by MACOM Technology Solutions. This series encompasses devices with small and medium I-region lengths tailored for high signal environments. The product line offers flexibility through various package options, ranging from bare chips to assembled ceramic and surface-mount configurations, catering to diverse design integration needs.

RF Diode Replacement Considerations

MA4L401-134 (Chip version)

RF Diode FAQ

What distinguishes the MA4L401 from gold-doped devices in the same series?

The MA4L401 utilizes a non-gold doped die, which is specifically designed to provide lower flat leakage power compared to gold-doped devices, though it may have different carrier lifetime characteristics.

What is the maximum breakdown voltage for the MA4L401?

The maximum breakdown voltage is guaranteed by design to be 300 V, with a minimum of 250 V. Exceeding this value may damage the device.

How is the series resistance defined for this component?

The maximum series resistance (RS) is measured at 500 MHz and represents the total diode resistance, including both the chip junction resistance and the package ohmic resistance.