MA4P7102B-401T

RF Diode Overview

The MA4P7102B-401T is a high-power silicon PIN diode from the MACOM MA4P7100 series, housed in an axial leaded HIPAX package (Case Style 401). It features a fully passivated chip with full face bonding for low thermal resistance. Key electrical specifications include a maximum reverse voltage of 200 VDC, a maximum total capacitance of 1.0 pF at 100 V reverse bias, and a maximum series resistance of 0.5 Ω at 100 mA forward current. The device supports a junction temperature range of -55°C to +175°C and offers a minimum carrier lifetime of 2.5 µs.

RF Diode Feature Summary

• High power handling capability suitable for demanding RF environments
• Low distortion performance optimized for attenuator applications
• Passivated chip construction ensures extremely low reverse bias leakage current
• Full face chip bonding provides symmetrical thermal paths and low thermal resistance

RF Diode Applications

• High power switch circuits operating from HF through UHF frequencies
• Low distortion attenuator designs requiring high CW power levels above 1 kW
• Cellular radio antenna switching systems

RF Diode Procurement Notes

Verify the specific ordering suffix when purchasing. The 'B' indicates an axial leaded HIPAX package, while 'T' denotes tape and reel packaging. Confirm whether the required quantity necessitates bulk or reel ordering formats. Ensure compliance with RoHS standards if applicable to the assembly process. Cross-reference the case style number 401 with mechanical drawings for proper footprint compatibility during integration.

RF Diode Selection Notes

Select this component for applications requiring robust power handling and low insertion loss. The 200 V rating suits moderate voltage switching needs compared to higher voltage variants. The axial leaded format facilitates manual assembly or specific through-hole mounting requirements. Evaluate thermal management strategies based on the specified power dissipation ratings under continuous wave conditions.

RF Diode Part Context

This part belongs to the MACOM MA4P MELF & HIPAX series, designed for high power and low distortion RF applications. The MA4P7100 series specifically targets switch and attenuator uses with a balance of low series resistance and capacitance. The HIPAX package variant provides ruggedness and ease of handling for various industrial and communication infrastructure deployments.

RF Diode Replacement Considerations

Direct substitutes within the same family include MA4P7101B-401T and MA4P7104B-401T. Selection depends on matching reverse voltage and capacitance requirements. Higher voltage options like the 400V rated MA4P7104B-401T offer increased breakdown tolerance but may differ slightly in parasitic characteristics.