MAGX-000035-01000P

Description：RF MOSFET HEMT 50V
Series：-

SKU:4b7b047a53a8 Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET HEMT 50V
Series：-
Mfr：MACOM Technology Solutions
Package：Bulk
Technology：HEMT
Frequency：3.5GHz
Gain：17dB
Voltage - Test：50 V
Current Rating (Amps)：500mA
Noise Figure：-
Current - Test：30 mA
Power - Output：10W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Configuration：-

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MAGX-000035-01000P

Overview

The MAGX-000035-01000P is a GaN on SiC D-mode transistor designed for wideband RF applications from DC to 3.5 GHz. It delivers 10 W CW output power at 1.6 GHz with a typical drain efficiency of 56%. The device operates at a 50 V bias and features a thermally enhanced 3 x 6 mm 14-lead DFN package. It supports high junction temperatures up to 200°C, ensuring reliability in both continuous wave and pulsed modes.

Feature Summary

Utilizes GaN on SiC technology for unmatched reliability and wide frequency capability.
Features a thermally enhanced plastic package suitable for true surface-mount assembly.
Supports operation at junction temperatures up to 200°C using internal stress buffer technology.

Applications

Pulsed RF power amplification
Continuous wave (CW) RF power amplification
Wideband transmitter modules

Procurement Notes

Verify the specific ordering suffix to confirm packaging type. The 'P' suffix indicates bulk packaging, while other suffixes may denote reel sizes or sample boards. Ensure compatibility with RoHS standards and moisture sensitivity level requirements during procurement.

Selection Notes

Select this component for designs requiring high voltage operation and wide bandwidth in a compact form factor. Consider the thermal resistance characteristics when designing heat dissipation solutions. Verify that the application circuitry can support the required 50 V drain supply and negative gate bias sequencing.

Part Context

This part belongs to MACOM's MAGX series of GaN transistors. It serves as a replacement for costly flanged or metal-backed module components due to its small size and excellent RF performance. The series emphasizes cost reduction and weight savings while maintaining high reliability.