MAGX-000035-045000

Overview

The MAGX-000035-045000 is a Gallium Nitride on Silicon Carbide (GaN/SiC) depletion mode High Electron Mobility Transistor (HEMT) designed for pulsed power applications. It operates from DC to 3500 MHz with a peak output power of 45 W at 2700–3500 MHz and 60 W at 1030–1090 MHz. The device utilizes a thermally enhanced Cu/Mo/Cu flanged ceramic package, supporting a typical drain voltage of +50 V and a maximum supply voltage of +65 V under pulsed conditions.

Feature Summary

• Constructed using GaN on SiC technology for high breakdown voltage and ruggedness in extreme mismatched load conditions.
• Features a thermally enhanced Cu/Mo/Cu flanged ceramic package providing excellent thermal performance.
• Designed for broadband Class AB operation in common-source configuration.

Applications

• Civilian Pulsed Radar
• Military Pulsed Radar

Procurement Notes

Verify the specific ordering suffix against official MACOM documentation before procurement. The MAGX-000035-045000 designation corresponds to bulk packaging. Alternative configurations, such as sample boards, utilize different suffixes like MAGX-S10035-045000. Confirm that the required packaging format aligns with the intended manufacturing or evaluation process to ensure compatibility.

Selection Notes

Select this component for radar systems requiring high peak power and wide bandwidth operation between DC and 3500 MHz. Ensure the design accommodates the specified 1 ms pulse width and 10% duty cycle constraints. Verify that the application environment supports the operating temperature range of -40°C to +95°C and that proper sequencing protocols are implemented to protect the gate-source junction during power-up and power-down cycles.

Part Context

This part belongs to the MAGX series of RF power transistors manufactured by M/A-COM Technology Solutions Inc. These devices are engineered for demanding RF environments, leveraging advanced wafer fabrication processes to deliver high gain, efficiency, and bandwidth. The series targets applications where reliability and performance under stress are critical requirements.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

FAQ

What is the recommended device sequencing procedure?

To turn the device ON, set VGS to pinch-off, apply VDS, increase VGS to reach IDS current, then apply RF power. To turn OFF, remove RF power, decrease VGS to pinch-off, reduce VDS to 0 V, and finally turn off VGS.

What are the absolute maximum ratings for supply voltage?

The absolute maximum pulsed supply voltage (VDD) is +65 V, and the gate supply voltage (VGg) ranges from -8 V to 0 V.

How does the device handle load mismatch?

The transistor demonstrates stability up to a VSWR of 5:1 and tolerance up to a VSWR of 10:1 when tested with a 4 W input power.