MAGX-000035-05000P

Overview

The MAGX-000035-05000P is a GaN on SiC depletion-mode (D-Mode) transistor designed for pulsed RF applications across the DC to 3.5 GHz frequency range. It features a thermally enhanced 3 x 6 mm 14-lead DFN plastic package and operates with a typical Class AB bias of 50 V. The device delivers a typical pulsed output power of 50 W at 1 ms pulse width and 10% duty cycle, achieving up to 66% drain efficiency. It supports high load mismatch tolerance, withstanding VSWR up to 10:1, and maintains reliability at junction temperatures up to 200°C.

Feature Summary

• Utilizes GaN on SiC technology with internal stress buffer for reliable operation at elevated junction temperatures.
• Offers unmatched performance specifically optimized for pulsed applications compared to continuous wave devices.
• Features a compact 3 x 6 mm 14-lead DFN plastic package suitable for true surface-mount integration.
• Provides robust load mismatch stability and tolerance for demanding RF environments.

Applications

• Pulsed radar systems
• Electronic warfare equipment
• Broadband communication transmitters

Procurement Notes

Verify the specific ordering suffix to confirm packaging type; the 'P' suffix indicates bulk packaging, while other suffixes may denote reel or sample board configurations. Ensure compatibility with RoHS directives and moisture sensitivity level 1 requirements during storage and handling. Confirm that the design accommodates the required thermal management for the specified duty cycles and junction temperatures.

Selection Notes

Select this component when high peak power in a small form factor is required for pulsed signals rather than continuous wave operation. Consider the 50 V typical bias requirement and the need for appropriate gate drive sequencing to prevent latch-up. Evaluate thermal resistance characteristics against the expected duty cycle and ambient temperature conditions to ensure junction temperature limits are not exceeded.

Part Context

This part belongs to MACOM's MAGX series of wideband GaN transistors, which are engineered for high voltage and high power density. The series utilizes silicon carbide substrates to support superior thermal conductivity and breakdown voltage capabilities compared to standard silicon technologies.

Replacement Considerations

MAGX-000035-05000TP

FAQ

What is the recommended bias sequencing for turning the device ON?

Set the gate voltage (VG) to pinch-off (typically -5 V), turn on the drain supply (VD) to nominal voltage (50 V), increase VG until the desired IDS current is reached, and then apply RF power.

How does the device handle load mismatches?

The transistor demonstrates strong load mismatch stability and tolerance, capable of withstanding a VSWR of up to 5:1 for stability and up to 10:1 for tolerance under pulsed operating conditions.

What is the maximum junction temperature rating?

The absolute maximum junction temperature is rated at 200°C, supported by internal stress buffer technology that ensures reliable operation at these elevated temperatures.