MAGX-000912-250L00

Overview

The MAGX-000912-250L00 is a GaN on SiC depletion-mode HEMT pulsed power transistor designed for the 960 MHz to 1215 MHz frequency range. It delivers a peak output power of 250 W with a 128 µs pulse width and 10% duty cycle. The device operates at a typical drain voltage of +50 V, providing a gain of approximately 18.7 dB and a drain efficiency up to 61.1%. It features an internally matched common-source configuration and robust load mismatch tolerance.

Feature Summary

• Gallium Nitride on Silicon Carbide depletion-mode technology
• Internally matched broadband design for Class AB operation
• High ruggedness with extreme load mismatch tolerance
• RoHS compliant and compatible with standard reflow processes

Applications

• Civilian Air Traffic Control L-Band Secondary Radar
• Military radar systems for IFF and Data Links
• Mode-S Avionics and TCAS applications
• JTIDS, DME, and TACAN amplifier modules

Procurement Notes

Verify the specific part number suffix against official MACOM documentation to confirm exact manufacturing revisions and testing conditions. Ensure that procurement channels provide original manufacturer traceability. Confirm compliance with RoHS directives and verify that the component meets the required moisture sensitivity level standards before integration into production assemblies.

Selection Notes

Select this component for high-power pulsed RF applications requiring wide bandwidth in the L-band spectrum. The internal matching network simplifies circuit design by eliminating external impedance matching components. Evaluate thermal management requirements carefully, as junction temperature directly impacts long-term reliability and mean time to failure metrics under continuous pulsed operation.

Part Context

This device belongs to the MAGX series of Gallium Nitride on Silicon Carbide power transistors from M/A-COM Technology Solutions. The series utilizes advanced wafer fabrication processes to achieve high gain, efficiency, and bandwidth. These transistors are specifically engineered to handle demanding avionics environments where traditional semiconductor technologies may lack sufficient breakdown voltage or operational stability.

Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Do not assume functional equivalence with other L-band transistors without verifying pinout compatibility, electrical specifications, and thermal characteristics against the original datasheet.

FAQ

What is the recommended DC sequencing procedure for turning the device ON?

Set the gate voltage (VGS) to pinch-off, typically -5 V. Turn on the drain voltage (VDS) to the nominal 50 V. Increase VGS until the desired drain current is reached, then apply the RF power.

How does the device perform under severe load mismatch conditions?

The transistor exhibits high ruggedness, maintaining stable operation with a source mismatch tolerance of 5:1 VSWR and a load mismatch tolerance of 10:1 VSWR.

What is the maximum operating junction temperature?

The absolute maximum operating junction temperature is 250 °C. However, keeping the junction temperature below 200 °C significantly extends the Mean Time To Failure (MTTF).