MAGX-001214-250L00

Overview

The MAGX-001214-250L00 is a GaN on SiC depletion-mode HEMT transistor designed for pulsed power applications. It operates within the 1200 MHz to 1400 MHz frequency range and delivers a peak output power of 250 W under standard test conditions (300 µs pulse width, 10% duty cycle). The device features an internally matched common-source configuration with a typical drain voltage of +50 V. Key electrical specifications include a forward transconductance of 7.7 S, a gate threshold voltage of -3.1 V, and a maximum drain-source leakage current of 12 mA at VDS = 175 V.

Feature Summary

• GaN on SiC depletion-mode technology providing high breakdown voltage and ruggedness
• Internally matched broadband design optimized for Class AB operation
• Common-source configuration ensuring stable performance in extreme mismatched load conditions

Applications

• L-Band pulsed radar systems

Procurement Notes

Verify component authenticity through authorized MACOM distributors or official channels. Confirm that the specific part number matches the required datasheet revision. Ensure handling procedures comply with ESD protection standards, as the device has specified machine model and human body model limits. Check for RoHS compliance status if environmental regulations apply to the final assembly.

Selection Notes

Select this component when designing L-Band radar transmitters requiring high peak power density and wide bandwidth. Consider the thermal resistance and junction temperature limits to ensure reliability. Evaluate the internal matching network suitability against system impedance requirements. Assess the pulsed operation parameters to verify compatibility with the intended duty cycle and pulse width constraints.

Part Context

This device belongs to the MAGX series of Gallium Nitride on Silicon Carbide RF power transistors manufactured by MACOM Technology Solutions. The series focuses on high-performance solutions for demanding radio frequency applications, leveraging advanced wafer fabrication processes to achieve superior gain, efficiency, and bandwidth compared to older semiconductor technologies.

Replacement Considerations

Consult MACOM directly for verified substitute part numbers or updated product line replacements. Do not assume functional equivalence with other manufacturers' devices without comprehensive testing and validation against the original specifications.

FAQ

What is the recommended device sequencing for turning the MAGX-001214-250L00 ON?

Set VGS to pinch-off voltage, turn on VDS to nominal voltage, increase VGS until IDS current is reached, and then apply RF power.

How does the device handle load mismatch conditions?

The transistor is designed to operate reliably and stably in extreme mismatched load conditions, supporting a VSWR-S of 5:1 and a VSWR-T of 10:1.

What are the absolute maximum ratings for Drain Voltage and Gate Voltage?

The absolute maximum Drain Voltage (VDD) is +65 V, and the Gate Voltage (VGG) range is -8 V to -2 V.