MAGX-001220-100L00

Overview

The MAGX-001220-100L00 is a Gallium Nitride on Silicon Carbide (GaN on SiC) depletion-mode HEMT transistor designed for high-power RF applications. It delivers a peak output power of 100 W with a typical value of 110 W across the 1.2 to 2.0 GHz frequency range. The device operates at a typical drain voltage of +50 V and achieves a drain efficiency of up to 55% under pulsed conditions (300 µs pulse width, 10% duty cycle). Key electrical parameters include a forward transconductance of 2.5 S, an output capacitance of 30.3 pF, and a gate threshold voltage ranging from -5 V to -2 V.

Feature Summary

• Constructed using GaN on SiC technology for high breakdown voltage and ruggedness in extreme mismatched load conditions.
• Features a thermally enhanced Cu/Mo/Cu flanged ceramic package providing excellent thermal performance.
• Supports broadband Class AB operation suitable for both pulsed and continuous wave applications.

Applications

• Commercial wireless infrastructure including WCDMA, LTE, and WiMAX
• Civilian and military radar systems
• Military and commercial communications networks
• Satellite communications (SATCOM)
• Industrial, scientific, and medical equipment

Procurement Notes

Verify component authenticity through authorized MACOM distributors or direct channels. Confirm RoHS compliance status and check for specific export classification requirements, as the device is classified as EAR99. Ensure handling procedures strictly follow electrostatic discharge (ESD) precautions due to the sensitivity of GaN devices. Review the latest datasheet revision for any updates to absolute maximum ratings or thermal resistance values before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high peak power density within the 1.2 to 2.0 GHz band. The device is optimized for pulsed operations with a 300 µs pulse width and 10% duty cycle, though it supports general purpose CW use. Consider the thermal management capabilities of the Cu/Mo/Cu package when designing heat sinks. Ensure bias sequencing protocols are implemented to protect the gate-source junction during power-up and power-down cycles.

Part Context

This part belongs to the MAGX series of GaN on SiC HEMT transistors from MACOM Technology Solutions. These components are engineered for next-generation RF power amplifiers, leveraging advanced wafer fabrication processes to deliver superior gain, efficiency, and bandwidth compared to older semiconductor technologies. The series targets demanding applications requiring reliability and high power output in compact form factors.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the recommended bias sequencing for turning the device ON?

First set VGS to the pinch-off voltage (typically -5 V), then turn on VDS to the nominal voltage (+50 V). Next, increase VGS until the desired IDS current is reached, and finally apply the RF power.

What is the estimated Mean Time To Failure (MTTF) for this transistor?

The MTTF is specified as 600 years, provided the junction temperature remains below 200°C.

How does the device perform under load mismatch conditions?

The transistor exhibits high ruggedness, maintaining stability with a VSWR-S of 5:1 and tolerating a VSWR-T of 10:1.