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The MAPC-A3005-AS000 is a Gallium Nitride (GaN) field-effect transistor manufactured by MACOM Technology Solutions. It is designed for high-power radio frequency applications, operating within a frequency range of DC to 6 GHz or DC to 8 GHz depending on specific datasheet references. The device provides an output power capability of 5W to 9W and features a 2.16mm pill package configuration. Key electrical parameters include a drain-source voltage of 28V and a gate charge specification relevant to its switching performance.
Verify the specific datasheet version to confirm exact electrical limits, as sources indicate variations in rated output power and frequency ranges. Ensure compatibility with the 2.16mm pill footprint during PCB layout. Confirm RoHS compliance status and check for any specific handling requirements associated with GaN semiconductor materials prior to assembly.
Select this component when a high-power RF solution is required within the specified frequency bands. Consider the thermal management capabilities inherent to the pill package style. Evaluate whether the 28V rating aligns with system biasing requirements. Compare against other GaN options if higher frequencies or different power levels are needed.
This part belongs to MACOM's portfolio of GaN-based RF transistors. These components are engineered to replace traditional silicon-based solutions in demanding RF environments. The series focuses on providing superior linearity and efficiency for modern communication standards.
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with MACOM's official replacement guides or consult manufacturer technical support for validated alternatives.